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Details, datasheet, quote on part number:UPA1804
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| Part: | UPA1804 |
| Category: | Discrete => Transistors => Bipolar => Switching => NPN |
| Description: | N-channel MOS Field Effect Transistor For Switching |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1804 datasheet File size : 65 kB |
| Request For quote: | Find where to buy UPA1804
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1804
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
This product is a switching device which can be driven directly by a 4.5 V power source. The µPA1804 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate
1.2 MAX. 1.0±0.05 0.25
5° 3° +3°
FEATURES
· Can be driven by a 4.5 V power source · Low on-state resistance RDS(on)1 = 23 m MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 32 m MAX. (VGS = 4.5 V, ID = 4.0 A) · Built-in G-S protection diode against ESD
0.145 ±0.055
3.15 ±0.15 3.0 ±0.1 1 4
0.1±0.05
0.5
01 0.6 +0..15
6.4 ±0.2 4.4 ±0.1 1.0 ±0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65
0 03 0.27 +0..08
0.8 MAX. 0.10 M
0.1
µPA1804GR-9JG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
30 ±20 ±8.0 ±32 2.0 150 55 to +150 V V A A W °C °C
Gate Protection Diode Source Gate Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch T stg
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. PW 10 µs, Duty Cycle 1 % 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13868EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan
©
1998,1999
µ PA1804
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V ID = 4.0 A VGS(on) = 10 V RG = 10 VDS = 24 V ID = 8.0 A VGS = 10 V IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100 A / µs 1.0 3 2.1 8.7 18 24 761 258 99 24 83 46 29 13.5 2.4 3.7 0.86 27 16 23 32 MIN. TY P . MAX. 10 ±10 2.5 UNIT
µA µA
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1µ s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D13868EJ1V0DS00
µ PA1804
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA 100
n) (o DS GS
d ite V) Lim 10 =
ID(pulse)
PW
dT - Derating Factor - %
R
10
V (@
ID(DC)
10
=1
ms
60
1
ms 10 0m s DC
40
0.1
TA = 25 °C Single Pulse Mounted on Ceramic Substrate of 50cm2 x 1.1mm
20
0
30 60 120 90 TA - Ambient Temperature - °C
150
0.01 0.1
1
10
100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 VGS = 10 V 25
ID - Drain Current - A
TRANSFER CHARACTERISTICS 100 10
ID - Drain Current - A
VDS = 10 V
20 15 10 5
4.5 V
1 0.1 0.01 0.001
TA = -25°C 25°C 75°C 125°C
0.0001
0
0.2
0.4
0.6
0.8
1.0
0.00001
VDS - Drain to Source Voltage - V
1.0
4.0 2.0 3.0 VGS - Gate to Sorce Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 100
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
2.5
VDS = 10 V ID = 1 mA
VDS = 10 V
10
2.0
1
TA = -25°C 25°C 75°C 125°C
0.1
1.5 -50
0
50
100
150
Tch - Channel Temperature - °C
0.01
0.1
1
10
100
ID - Drain Current - A
Data Sheet D13868EJ1V0DS00
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