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Details, datasheet, quote on part number:UPA826TC-T1
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| Part: | UPA826TC-T1 |
| Category: | Discrete => Transistors => Bipolar => Audio Amplifier Application => NPN |
| Description: | NPN Silicon Epitaxial Twin Transistor With Built-in 2 X 2sc5010 Flat-lead 6-pin Thin -type Ultra Super Minimold |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA826TC-T1 datasheet File size : 68 kB |
| Request For quote: | Find where to buy UPA826TC-T1
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Datasheet text preview:
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA826TC
NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 2 × 2SC5010) FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD
FEATURES
· Low noise and high gain · Operable at low voltage · Small feedback capacitance: Cre = 0.4 pF TYP. · Flat-lead 6-pin thin-type ultra super minimold package · Built-in 2 transistors (2 × 2SC5010)
ORDERING INFORMATION
Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Taping products (3 kp/reel) Supplying Form Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape.
µPA826TC µPA826TC-T1
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPA826TC. Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25°C) °
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT
Note
Ratings 9 6 2 30 180 in 1 element 230 in 2 elements 150 -65 to 150
Unit V V V mA mW
Junction Temperature Storage Temperature
Tj Tstg
°C °C
2 Note Mounted on 1.08 cm × 1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P14553EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan
©
1999
µPA826TC
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance Insertion Power Gain Noise Figure Symbol ICBO IEBO hF E fT Cre |S21e| NF
2
Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA
Note 1
MIN. - - 75 10.0 - 7.0 -
TYP. - - - 12.0 0.4 8.5 1.5
MAX. 0.1 0.1 150 - 0.7 - 2.5
Unit
µA µA
VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHz
Note 2
GHz pF dB dB
VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz
Notes 1 . 2.
Pulse Measurement: PW 350 µs, Duty Cycle 2% Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge method). Emitter should be connected to the guard pin of capacitance meter.
hFE CLASSIFICATION
Rank Marking hFE Value KB 83 75 to 150
2
Data Sheet P14553EJ1V0DS00
µPA826TC
TYPICAL CHARACTERISTICS (TA = +25 °C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 230 200 180 Per Element 2 Elements in total Free Air Collector Current IC (mA) 50 VCE = 3 V 40 COLLECTOR CURRENT vs. DC BASE VOLTAGE
Total Power Dissipation PT (mW)
30
100
20
10
0
0
50
100
150
0
0
0.5 DC Base Voltage VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT
1.0
Ambient Temperature TA (°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 20 IB = 160 µ A DC Current Gain hFE IB = 140 µ A IB = 120 µ A IB = 100 µ A 8 IB = 80 µ A IB = 60 µ A 4 IB = 40 µ A IB = 20 µ A 0 0 1 2 3 4 5 6 10 0.1 1 000
VCE = 3 V
Collector Current IC (mA)
16
12
100
1
10
100
Collector to Emitter Voltage VCE (V) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 18.00 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz 16.00 12.00 Insertion Power Gain S21e2 (dB)
Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz
10.00
14.00
8.00
12.00
6.00
10.00
4.00
8.00
1
10 Collector Current IC (mA)
100
2.00
1
10 Collector Current IC (mA)
100
Data Sheet P14553EJ1V0DS00
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