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Details, datasheet, quote on part number:UPD16856GS
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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16856
MONOLITHIC CD-ROM 3-PHASE SPINDLE MOTOR DRIVER
The µPD16856 is a CD-ROM 3-phase spindle motor driver consisting of a CMOS controller and MOS bridge outputs. By employing 3-phase full-wave PWM as the drive method and MOS FETs at the output stage, it has been possible to reduce the power consumption of the µPD16856 ever further than the conventional linear drive drivers that use bipolar transistors. By using a 30-pin shrink SOP package, a more compact-size has been achieved.
FEATURES
· · · · · · · · · · · · · Supply voltage for controller block: 5 V, supply voltage for output block: 12 V 3 V input available for the input interface Low on-state resistance (total on-state resistance of upper and lower MOS FETs) RON = 1.3 (TYP.) Low power consumption due to 3-phase full-wave PWM drive method On-chip hole bias switch (linked with STB pin) On-chip IND (FG) pulse switching function, 1-phase output or 3-phase composite output START/STOP pin included, acting as a brake during STOP Standby pins included, turning off internal circuit in standby Low current consumption: IDD = 3 mA (Max.), IDD (ST) = 1 µA (Max.) On-chip thermal shutdown circuit On-chip current limiting circuit; reference voltage can be set externally On-chip low voltage malfunction prevention circuit On-chip reverse rotation prevention circuit 30-pin plastic shrink SOP (300 mil)
ORDERING INFORMATION
Part Number Package 30-pin shrink SOP (0.8-mm pitch, 300 mil)
µPD16856GS
T h e information in this document is subject to change without notice.
Document No. S13447EJ1V0DS00 (1st edition) Date Published April 1999 N CP(K) Printed in Japan
©
1999
µPD16856
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) °
Parameter Supply voltage Symbol VDD VM Input voltage Instantaneous output current Power consumption
Note 2 Note 1
Conditions
Ratings -0.5 to +6.0 -0.5 to +13.5 -0.5 to VDD + 0.5
Unit V V V A/phase W °C °C
VIN IDR (pulse) PT TCH (MAX) Tstg PW 5 ms, Duty 30%
±2.0 1.0 150 -55 to +150
Peak channel temperature Storage temperature range
Notes 1. Allowable current per phase while on-board 2. When mounted on glass epoxy board (100 mm × 100 mm × 1 mm)
RECOMMENDED OPERATING RANGE
Parameter Supply voltage Symbol VDD VM Output current (DC) Instantaneous output current Hole bias current IND pin output current CL pin input voltage Operating temperature range IDR (DC) IDR (pulse) IHB IF G VCL TA 0 0.1 -20 PW 5 ms, Duty 10% 10 ±2.5 Conditions MIN. 4.5 10.8 TYP. 5.0 12.0 MA X . 5.5 13.2 ±0.5 ±1.5 15 ±5 0.4 75 Unit V V A/Phase A/Phase mA mA V °C
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Data Sheet S13447EJ1V0DS00
µPD16856
ELECTRICAL SPECIFICATIONS (UNLESS OTHERWISE SPECIFIED, TA = 25°C, VDD = 5 V, VM = 12 V) °
Parameter [General] Current consumption 1 (during operation) Current consumption (in standby) [ST/SP, STB, REV, FGsel] Input voltage, high Input voltage, low Input pull-down resistor [Controller block] Triangle wave oscillation frequency [Hole amplifier] Common mode input voltage range Hysteresis voltage Input bias current [Hole bias block] Hole bias voltage [FG output] IND-pin voltage, high IND-pin voltage, low [Output block] Output on-state resistance (upper stage + lower stage) Leakage current during OFF Output turn-on time Output turn-off time [Torque command] Control reference input voltage range Control input voltage range Input current Input voltage difference Dead zone (+) Dead zone (-) [Overcurrent detection block] Input offset voltage VI O -15 +15 mV ECR EC IIN ECR-EC EC_d+ EC_d-
Note
Symbol
Conditions
MIN.
TYP.
MA X .
Unit
IDD IDD
(ST)
STB = VDD STB = GND
1.5
3.0 1.0
mA
µA
VIH VI L RIND
1.8
VDD 0.8 120
V V k
fPWM
CT = 100 pF
75
kHz
VHch VHhys IHbias VH = 2.5 V
1.0 15
3.5
V mV
1.0
µA
VHB
IHB = 10 mA
0.3
0.5
V
VFG_H VFG_L
IFG = -2.5 mA IFG = +2.5 mA
4.0 0.5
V V
RON IDR (OFF) tONH tOFFH
IDR = 200 mA TA = -20°C to +75°C In standby RM = 5 Star connection
1.3
1.8 10
µA µs µs
1.0 1.0
2.0 2.0
0.3 0.3 30 DUTY = 100% 1.5 V ECR 2.5 V 1.5 V ECR 2.5 V 0 0 1.0 50 -50
4.0 4.0 50
V V
µA
V
100 -100
mV mV
Note Dead zone not included. Remarks 1. The thermal shutdown circuit (T.S.D.) operates with TCH > 150°C. 2. The low-voltage malfunction prevention circuit (UVLO) operates with a voltage of 4 VTYP.
Data Sheet S13447EJ1V0DS00
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