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Details, datasheet, quote on part number:UPD16873MC-6A4
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DATA SHEET
µPD16873/A/B/C
MONOLITHIC 3-ASPECT SPINDLE MOTOR DRIVER
MOS Integrated Circuit
DESCRIPTION
µPD16873/A/B/C is 3 aspect spindle motor driver that composed by CMOS control circuit and MOS bridge output.
The consumption electric power can be substantially reduced to the screwdriver which used a conventional Bipolar transistor by the adoption of 3 aspect all-wave PWM methods and making an output paragraph MOSFET.
FEATURES
· Low On resistance. (The summation of the on resistance of the upper and lower MOSFET) RON = 0.6 (TYP.) · Low consumption power for 3 aspects all-wave PWM drive method. · Index pulse (FG pulse) output function built in. · By the PWM-drive form and the IND pulse pattern, 4 kind, line-up
PWM method Pattern of IND pulse (at 12 pole motor) 3 phase composition output (18 pulses/turn) 1 phase output (6 pulses/turn) 1 phase output (6 pulses/turn) 3 phase composition output (18 pulses/turn)
µPD16873 µPD16873A µPD16873B µPD16873C
normal normal synchronous synchronous
· Built in STANDBY terminal and off the inner circuit at the time of the standby. · Built in START/STOP terminal. Operating short brake works, when ST/SP terminal is off state. · Supply voltage: 5 V drive · Low consumption current: IDD = 3 mA (MAX.) · Thermal shut down circuit (TSD) built in. · Over current protection circuit built in. (Setting by outside resistance) · Low voltage malfunction prevention circuit built in. · Reverse turn prevention circuit built in. · Hall bias switch built in. (synchronized STB signal.) · Loading into 30-pin plastic TSSOP (300 mil).
ORDERING INFORMATION
Part number Function normal-PWM/3 phase IND normal-PWM/1 phase IND 30-pin plastic TSSOP (7.62 mm (300)) synchronous-PWM/1 phase IND synchronous-PWM/3 phase IND Package
µPD16873MC-6A4 µPD16873AMC-6A4 µPD16873BMC-6A4 µPD16873CMC-6A4
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. S13870EJ1V0DS00 (1st edition) Date Published February 2000 N CP(K) Printed in Japan
©
2000
µPD16873/A/B/C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) ° When mounted on a glass epoxy board (10 cm × 10cm × 1mm, 15% copper foil)
Parameter Supply voltage Symbol VDD VM Input voltage Output pin voltage Output current (DC)
Note 1
Condition control block output block
Rating -0.5 to +5.7 -0.5 to +5.7 -0.5 to VDD + 0.5 -0.5 to +6.7
Unit V V V V A/phase A/phase A/phase W °C °C
VIN VOUT ID(DC) ID(pulse)
Note 3
DC PW < 5 ms, Duty < 30 % PW < 5 ms, Duty < 30 %
±0.5 ±1.3 ±1.9 1.0 150 -55 to 150
Output current (pulse)
Note 2
Output current (pulse, reverse brake) Power consumption Peak junction temperature Storage temperature range
IDR(pulse) PT TCH(MAX) Tstg
Notes 1. DC 2. PW < 5 ms, Duty < 30 % (start-up, locking) 3. PW < 5 ms, Duty < 30 % (reverse brake)
RECOMMENDED OPERATING CONDITIONS When mounted on a glass epoxy board (10 cm × 10cm × 1mm, 15% copper foil)
Parameter Supply voltage Symbol VDD VM Input voltage Output current (DC)
Note 1
Condition control block output block
MIN. 4.5 4.5 0
TYP. 5.0 5.0
MA X . 5.5 5.5 VDD 0.4 1.0 1.5
Unit V V V A/phase A/phase A/phase mA mA °C
VIN ID(DC) ID(pulse)
Note 3
DC PW < 5 ms, Duty < 30 % PW < 5 ms, Duty < 30 % 10 ±2.5 -20
Output current (pulse)
Note 2
Output current (pulse, reverse brake) Hall bias current IND terminal output current Operating temperature
IDR(pulse) IHB I FG TA
20 ±5.0 75
Notes 1. DC 2. PW < 5 ms, Duty < 30 % (start-up, locking) 3. PW < 5ms, Duty < 30 % (reverse brake)
2
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
CHARACTERISTICS (Unless otherwise specified, TA = 25°C, VDD = VM = 5 V) °
Parameter VDD pin current (operating) VDD pin current (standby) High level input voltage Low level input voltage Input pull-down resistance Triangle wave oscillation frequency Same aspect input range Hysteresis Input bias voltage Hall bias voltage IND terminal high level votlage IND terminal low level voltage Output on resistance (upper + lower MOSFET) Off state leakage Output turn-on time Output turn-off time Control standard input votlage range Control input voltage range Input current Input voltage difference Dead zone (+) Dead zone (-) Input offset voltage CL terminal voltage VI O VCL -15 90 100 15 110 mV mV ECR EC IIN ECR-EC EC_d+ EC_d- EC, ECR = 0.5 to 3.0 V Duty = 100%, ECR = 2 V exclusing dead zone ECR = 2 V ECR = 2 V 0 0 0.75 65 -65 100 -100 0.3 0.3 4.0 4.0 70 V V RON ID(OFF) tONH tOFFH ID = 200 mA -20°C < TA < 75°C -20°C < TA < 75°C RM = 5 star connection 0.6 0.9 10 1.0 1.0 VFG_H VFG_L IFG = -2.5 mA IFG = +2.5 mA 3.5 0.5 V V VHB IHB = 10 mA 0.3 0.5 V VHch VHhys IHbias VH = 2.5 V 1.5 15 4.0 50 1.0 V mV fPWM CT = 330pF 75 kHz VI H VI L RIND 110 1.8 VDD 0.8 V V k IDD IDD(ST) STB = VDD STB = GND 1.5 3.0 1.0 mA Symbol Condition MIN. TYP. MA X Unit
µA
µA
µA µs µs
µA
V mV mV
Thermal shut down circuit (TSD) works in TCH > 150°C. Low voltage malfunction prevention circuit (UVLO) works in 4 V (TYP.).
Data Sheet S13870EJ1V0DS00
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