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Details, datasheet, quote on part number:UPG2121TB-E3
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Datasheet text preview:
PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2121TB
L-BAND UP/DOWN CONVERTER
DESCRIPTION
The µPG2121TB is L-band up-converter or down-converter IC (LO Buff. Amp. + Passive Mixer). The device can convert the RF frequency to IF frequency and operate low current. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
· +2.8 V single voltage · Low distortion (IIP3 = +23 dBm TYP.) · Low current operation (IDD = 3.5 mA TYP.) · LO buffer amplifier and passive mixer on a single chip · 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm)
APPLICATION
· L-band digital cellular etc.
ORDERING INFORMATION
Part Number Package 6-pin super minimold Marking G2E Supplying Form Embossed tape 8 mm wide. Pin 1 face the tape perforation side. Qty 3kpcs / reel.
µPG2121TB-E3
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG2121TB)
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of GaAS HJ-FET.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P15014EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan
©
2000
µPG2121TB
PIN CONNECTIONS
Pin No. 1 2 3 Connection RF or IF GND VDD Pin No. 4 5 6 Connection LO IN GND IF or RF
Top View
Bottom View
4 5 6 4 5 6 3 2 1 3 2 1
Top View
4 5 6
2 1
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Supply Voltage LO Input Power RF Input Power Total Power Dissipation Operating Ambient Temperature Storage Temperature Symbol VDD PLO PRF Ptot TA Tstg Ratings 6.0 +10 +10 140
Note
G2E
3
Unit V dBm dBm mW °C °C
-30 to +90 -35 to +150
Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85 °C
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Preliminary Data Sheet P15014EJ1V0DS00
µPG2121TB
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Supply Voltage RF Frequency IF Frequency LO Input Power Symbol VDD fRF f IF PLO MIN. +2.7 810 50 -10 TYP. +2.8 - - -5 MAX. +3.0 960 400 0 Unit V MHz MHz dBm
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VDD = 2.8 V, fRF1 = 850 MHz, fRF2 = 850.1 MHz, PRF1 = PRF2 = -3 dBm, fLO = 940 MHz, PLO = -5 dBm, fIF = 90 MHz, fIM3 = 90.1 MHz)
Parameter Total Current Conversion Loss 3rd Order Distortion Input Intercept Note Point 3rd Order Intermoduration Distortion Local Leackage Symbol IDD LC I I P3 Test Condition MIN. - - +18 - - TYP. 3.5 -6.0 +23 -52 -13 MA X . 4.5 -7.5 - -42 -11 Unit mA dB dBm
IM3 LLO
dBc dBm
Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve. IM3 × PRF + CG - PIM3 IIP3 = [dBm] IM3: PIM3 gradient IM3 - 1 Calculated as IM3 = 3
Preliminary Data Sheet P15014EJ1V0DS00
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