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Details, datasheet, quote on part number:NTE12
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| Part: | NTE12 |
| Category: | Discrete => Transistors => Bipolar => Power => Complementary |
| Description: | Silicon Complementary Transistors High Current Amplifier |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE12 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE12
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Datasheet text preview:
NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier
Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in lowfrequency output amplifier, DC converter, and strobe applications. Features: D High Collector Current: IC = 5A Max D Low CollectorEmitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27V CollectorEmitter Voltage, VCEO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current NTE11 NTE12 Symbol ICBO VCB = 10V, IE = 0 VCB = 10V, IE = 0 0.1 100 Test Conditions Min Typ Max Unit µA nA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Emitter Cutoff Current NTE11 NTE12 CollectorEmitter Voltage NTE11 NTE12 EmitterBase Voltage DC Current Gain NTE11 NTE12 NTE11 Only CollectorEmitter Saturation Voltage NTE11 NTE12 Transition Frequency NTE11 NTE12 Collector Output Capacitance NTE11 NTE12 Cob VCB = 20V, IE = 0, f = 1MHz VCB = 20V, IE = 0, f = 1MHz 60 50 pF pF fT VCB = 6V, IE = 50mA, f = 200MHz VCB = 6V, IE = 50mA, f = 200MHz 150 120 MHz MHz hFE2 VCE(sat) IC = 3A, IB = 100mA, Note 1 IC = 3A, IB = 100mA, Note 1 0.4 1 1.0 V V VEBO hFE1 VCE = 2V, IC = 500mA, Note 1 VCE = 2V, IC = 2A, Note 1 VCE = 2V, IC = 2A, Note 1 340 180 150 600 625 VCEO IC = 1mA, IB = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 20 18 7 V V V Symbol IEBO VEB = 7V, IC = 0 VEB = 5V, IC = 0 0.1 1.0 Test Conditions Min Typ Max Unit µA µA
Note 1. Pulse measurement
.135 (3.45) Min .210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
ECB .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
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