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Part: NTE172A
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
Description: Silicon NPN Transistor. Darlington Preamp, Medium Speed Switch.
Company: NTE Electronics, Inc.
Datasheet: Download NTE172A datasheet File size : 27 kB
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Datasheet text preview:
NTE172A Silicon NPN Transistor Darlington Preamp, Medium Speed Switch
Description: The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Lead Temperature (During Soldering, 1/16" ±1/32" from case for 10sec max.), TL . . . . . . . . +260°C Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2% Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Static Characteristics CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage DC Current Gain V(BR)CBO IC = 0.1µA, IE = 0 V(BR)CEO IC = 10mA, IB = 0 V(BR)EBO IE = 0.1µA, IE = 0 hFE ICBO VCE = 5V, IC = 2mA VCE = 5V, IC = 100mA Collector Cutoff Current VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = +100°C 40 40 12 7000 20000 70000 100 20 nA µA V V V Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Static Characteristics (Cont'd) Emitter Cutoff Current CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage BaseEmitter Voltage Dynamic Characteristics SmallSignal Current Gain Current GainHigh Frequency Current GainBandwidth Product Input Impedance CollectorBase Capacitance Emitter Capacitance Noise Voltage hfe |hfe| fT hie Ccb Ceb en VCE = 5V, IC = 2mA, f = 1kHz VCE = 5V, IC = 2mA, f = 1kHz VCE = 5V, IC = 2mA, f = 10MHz VCE = 5V, IC = 2mA, f = 1kHz VCB = 10V, f = 1MHz VEB = 0.5V, f = 1MHz IC = 0.6mA, VCE = 5V, RG = 160k, f = 10Hz to 10kHz, B.W. = 15.7kHz 7000 15.6 60 650 7.6 10.5 195 10.0 230 dB MHz k pF pF nV/pHz IEBO VCE(sat) VBE(sat) VBE VEB = 12V, IC = 0 IC = 200mA, IB = 0.2mA IC = 200mA, IB = 0.2mA VCE = 5V, IC = 200mA 100 1.4 1.6 1.5 nA V V V Symbol Test Conditions Min Typ Max Unit
.135 (3.45) Min
C B
.210 (5.33) Max
Seating Plane
E
.500 (12.7) Min
.021 (.445) Dia Max
ECB .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
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