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Part: NTE175
Category:
Discrete
-> Transistors
-> Bipolar
-> Medium frequency
Description: Silicon Complementary Transistors High Voltage, Medium Power Switch
Company: NTE Electronics, Inc.
Datasheet: Download NTE175 datasheet File size : 20 kB
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Datasheet text preview:
NTE38 (PNP) & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch
Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high speed switching and linear amplifier applications for highvoltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D CollectorEmitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CollectorBase Voltage, VCB NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Vdc Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5°C/W Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0 NTE38 NTE175 CollectorEmitter Sustaining Voltage VCEX(sus) IC = 200mA, VBE = 1.5V, L = 10mH NTE38 Only VCER(sus) IC = 200mA, IB = 0, RBE = 50 EmitterBase Breakdown Voltage NTE38 Only Collector Cutoff Current Collector Cutoff Current NTE38 VEBO ICEO ICEV IE = 0.5mA, IC = 0 VCE = 150V, IB = 0 VCE = 250V, VBE(off) = 1.5V VCE = 250V, VBE(off) = 1.5V, TC = +100°C VCE = 315V, VBE(off) = 1.5V VCE = 315V, VBE(off) = 1.5V, TC = +100°C VCE = 360V, VBE(off) = 1.5V VCE = 360V, VBE(off) = 1.5V, TC = +100°C NTE175 ICEX IEBO VCE = 450V, VBE(off) = 1.5V VCE = 300V, VBE(off) = 1.5V, TC = +150°C Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain NTE38 NTE175 hFE IC = 1A, VCE = 4V IC = 0.1A, VCE = 10V IC = 1A, VCE = 2V IC = 1A, VCE = 10V CollectorEmitter Saturation Voltage NTE38 NTE175 BaseEmitter Saturation Voltage NTE38 NTE175 BaseEmitter ON Voltage NTE175 Only Dynamic Characteristics Current Gain Bandwidth Product NTE38 NTE175 Output Capacitance (NTE175 Only) Cob fT IC = 200mA, VCE = 10V, ftest = 5MHz, Note 3 VCB = 10V, IE = 0, f = 1MHz 20 15 120 MHz MHz pF VBE(on) VBE(sat) IC = 1A, IB = 125mA IC = 1A, IB = 100mA IC = 1A, VCE = 10V VCE(sat) IC = 1A, IB = 125mA 10 40 8 25 100 80 100 2.0 0.75 1.4 1.4 1.4 V V V V V VEB = 6V, IC = 0 350 300 400 375 6 5 0.5 5.0 0.5 5.0 0.5 5.0 1.0 3.0 0.5 V V V V V mA mA mA mA mA mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%. Note 3. fT = |hfe| ftest
Electrical Characteristics (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Second Breakdown Second Breakdown Collector Current NTE38 NTE175 Switching Characteristics NTE38 Rise Time Storage Time Fall Time NTE175 Rise Time Storage Time Fall Time tr ts tf tr ts tf VCC = 200V, IC = 1A IB1 = 100mA, RL = 200 IB1 = IB2 = 100mA VCC = 200V, IC = 1A IB1 = IB2 = 125mA 0.6 2.5 0.6 3.0 4.0 3.0 µs µs µs µs µs µs IS/b t = 1s (NonRepetitive), VCE = 40V VCE = 100V 875 350 mA mA Symbol Test Conditions Min Typ Max Unit
.485 (12.3) Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.360 (9.14) Min Base
.960 (24.3) .580 (14.7)
.147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max
Collector/Case
Emitter
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