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Details, datasheet, quote on part number:NTE193A
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| Part: | NTE193A |
| Category: | Discrete => Transistors => Bipolar => Power => Complementary |
| Description: | Silicon Complementary Transistors Audio Power Output |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE193A datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE193A
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Datasheet text preview:
NTE192 (NPN) & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output
Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits in industrial control applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25°C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/°C Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering, 1/16" ±1/32" from case for 10sec max), TL . . . . . . . . +260°C Note 1. Determined from power limitations due to saturation voltage at this current. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter DC Characteristics Collector Cutoff Current Emitter Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain ICBO IEBO VCB = 50V VCB = 50V, TA = +100°C VEB = 5V VCE(sat) IB = 3mA, IC = 50mA VBE(sat) IB = 3mA, IC = 50mA hFE VCE = 4.5V, IC = 2mA 180 0.1 15 0.1 0.30 0.85 540 µA µA µA V V Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter SmallSignal Characteristics SmallSignal Current Gain hf e VC = 4.5V, Frequency of Measurement =1000cps VCE = 10V, IC = 1mA, f = 1kc Input Impedance Output Admittance Voltage Feedback Ratio hie hoe hre VCE = 10V, IC = 1mA, f = 1kc VCE = 10V, IC = 1mA, f = 1kc VCE = 10V, IC = 1mA, f = 1kc 180 150 4200 10 0.2 300 8300 20 0.4 µmhos x 103 Symbol Test Conditions Min Typ Max Unit
.350 (8.89)
.187 (4.76) .156 (3.95)
.325 (8.27)
.125 (3.17) Dia .500 (12.7) Min
.017 (0.45) Dia
.100 (2.54) .050 (1.27) 3
.263 (6.7) Max
.127 (3.25) 2 1 Pin Number NTE192/193 1 C 2 B C 3 E E
NTE192A/193A B
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