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Details, datasheet, quote on part number:NTE194
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| Part: | NTE194 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. Audio Power Output. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE194 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE194
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Datasheet text preview:
NTE194 Silicon NPN Transistor Audio Power Amplifier
Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Thermal Resistance, JunctiontoAmbient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics CollectorEmitter Breakdown Voltage CollctorBase Breakdown Voltage EmitterBase Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 1mA, IB = 0, Note 2 V(BR)CBO IC = 100µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 ICBO IEBO VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = +100°C Emitter Cutoff Current VEB = 4V, IC = 0 180 180 6 50 50 50 V V V nA nA nA Symbol Test Conditions Min Typ Max Unit
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter ON Characteristics (Note 2) DC Current Gain hFE VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA VCE = 5V, IC = 50mA CollectorEmitter Saturation Voltage VCE(sat) VBE(sat) IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA BaseEmitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA SmallSignal Characteristics Current GainBandwidth Product Output Capacitance Input Capacitance SmallSignal Current Gain Noise Figure fT Cobo Cibo hfe NF VCE = 10V, IC = 10mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VBE = 0.5V, IC = 0, f = 1MHz VCE = 10V, IC = 1mA, f = 1kHz VCE = 5V, IC = 250µA, RS = 1k, f = 10Hz to 15.7kHz 100 50 300 6 20 200 8.0 dB MHz pF pF 80 80 30 250 0.15 0.20 1.0 1.0 V V V V Symbol Test Conditions Min Typ Max Unit
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
.135 (3.45) Min .210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
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