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Details, datasheet, quote on part number:NTE195A
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| Part: | NTE195A |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. RF Power Amp/driver, CB. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE195A datasheet File size : 25 kB |
| Request For quote: | Find where to buy NTE195A
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Datasheet text preview:
NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB
Description: The NTE195A is designed primarily for use in largesignal output amplifier stages. Intended for use in CitizenBand communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of upmodulation in AM circuits. Features: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: CollectorEmitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V Collector CurrentContinuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter OFF Characteristics CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz 35 70 pF hFE VCE = 2V, IC = 400mA 30 V(BR)CES IC = 200mA, VBE = 0 V(BR)EB
O
Symbol
Test Conditions
Min
Typ
Max Unit
70 4
0.01
V V mA
IE = 1mA, IC = 0 VCB = 15V, IE = 0
ICBO
Electrical Characteristics (Cont'd): (TA = +25°C, unless otherwise specified)
Parameter Functional Test Common Emitter Amplifier Power Gain Collector Efficiency Percent UpModulation Parallel Equivalent Input Resistance Parallel Equivalent Input Capacitance Parallel Equivalent Output Capaciatnce GPE Rin Cin Cout POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz, Note 1 f = 27MHz, Note 2 POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz 10 dB % % Symbol Test Conditions Min Typ Max Unit
62.5 70.0 85 21 900 200
pF pF
Note 1. = RF POUT 100 (VCC) (IC) Note 2. Percentage UpModulation is measured by setting the Carrier Power (PC) to 3.5 Watts with VCC = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the VCC to 25Vdc (to simulate the modulating voltage). Percentage UpModulation is then determined by the relation: Percentage UpModulation = (PEP) 1/21 100 PC
.370 (9.39) Dia Max .355 (9.03) Dia Max
.260 (6.6) Max
.500 (12.7) Min
.018 (0.45) Base Emitter Collector/Case
45°
.031 (.793)
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