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Details, datasheet, quote on part number:NTE196
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| Part: | NTE196 |
| Category: | Discrete => Transistors => Bipolar => Medium frequency |
| Description: | Silicon Complementary Transistors Audio Power Output And Medium Power Switching |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE196 datasheet File size : 25 kB |
| Request For quote: | Find where to buy NTE196
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Datasheet text preview:
NTE196 (NPN) & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching
Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D CollectorEmitter Sustaining Voltage: VCEO(sus) = 70V Min D High CurrentGain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min 70
Typ Max Unit 1.0 100 2.0 1.0 V mA µA mA mA
CollectorEmitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 Collector Cutoff Current ICEO ICEX Emitter Cutoff Current IEBO VCE = 60V, IB = 0 VCE = 80V, VEB(off) = 1.5V VCE = 80V, VEB(off) = 1.5V, TC = +150°C VBE = 5V, IC = 0
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TC = +25°C unless otherwise specified)
Parameter
ON Characteristics (Note 1)
Symbol hFE VCE(sat) VBE(on) fT
Test Conditions IC = 2A, VCE = 4V IC = 7A, VCE = 4V IC = 7A, IB = 3A IC = 7A, VCE = 4V
Min 30 2.3
Typ Max Unit 150 3.5 3.0 V V
DC Current Gain
CollectorEmitter Saturation Voltage BaseEmitter ON Voltage
Dynamic Characteristics
CurrentGain Bandwidth Product NTE196 NTE197
Output Capacitance SmallSignal Current Gain
IC = 500mA, VCE = 4V, ftest = 1MHz, Note 2 Cob hfe VCB = 10V, IE = 0, f = 1MHz IC = 500mA, VCE = 4V, f = 50kHz
4 10 20
250
MHz MHz pF
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%. Note 2. fT = |hfe| ftest .420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab
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