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Details, datasheet, quote on part number:NTE2364
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| Part: | NTE2364 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon Complementary Transistors High Current General Purpose Amp/switch |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2364 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE2364
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Datasheet text preview:
NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch
Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1 For PNP device (NTE2364), voltage and current values are negative. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE (1) hFE (2) fT Test Conditions VCB = 50V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 1.5A VCE = 10V, IC = 50mA Min 200 40 Typ 150 Max 0.1 0.1 400 MHz Unit µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Output Capacitance NTE2363 NTE2364 CollectorEmitter Saturation Voltage NTE2363 NTE2364 BaseEmitter Saturation Voltage CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage VBE(sat) IC = 1A, IB = 50mA V(BR)CBO IC = 10µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 VCE(sat) IC = 1A, IB = 50mA Symbol cob Test Conditions VCB = 10V, f = 1MHz Min 60 50 6 Typ 12 22 0.15 0.3 0.9 Max 0.4 0.7 1.2 Unit pF pF V V V V V V
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE =
.343 (8.73) Max
.492 (12.5) Min
.024 (0.62) Max
ECB
.102 (2.6) Max .059 (1.5) Typ .018 (0.48)
.118 (3.0) Max .236 (6.0)Dia Max
.197 (5.0) .102 (2.6) Max
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