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Details, datasheet, quote on part number:NTE2365
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| Part: | NTE2365 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. High Voltage Horizontal Deflection Output. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2365 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE2365
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Datasheet text preview:
NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output
Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Collector Sustaining Voltage Emitter Cutoff Current CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) ts t g tf Test Conditions VCB = 800V, IE = 0 VCE = 1500V, RBE = 0 VEB = 4V, IC = 0 IC = 10A, IB = 2.5A IC = 10A, IB = 2.5A VCE = 5V, IC = 1A VCE = 5V, IC = 10A IC = 8A, IB1 = 1.6A, IB2 = 3.2A Min 800 8 4 Typ Max Unit 10 1.0 1.0 5 1.5 30 8 3.0 0.2 µs µs µA mA V mA V V
VCEO(sus) IC = 100mA, IB = 0
.810 (20.57) Max .236 (6.0)
.204 (5.2)
1.030 (26.16) .137 (3.5) Dia Max
.098 (2.5)
.787 (20.0)
.215 (5.45)
.040 (1.0)
.023 (0.6)
B
C
E
Note: Pin2 connected to metal part of mounting surface.
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