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Details, datasheet, quote on part number:NTE2366
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Datasheet text preview:
NTE2366 Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage DC Current Gain CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage Current GainBandwidth Product Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO Test Conditions Min 300 300 5 40 Typ 150 2.6 1.8 Max 0.1 0.1 320 0.6 1.0 V V MHz pF pF Unit
VCB = 200V, IE = 0 VEB = 4V, IC = 0
µA µA
V V V
V(BR)CBO IC = 10µA, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10µA, IC = 0 hFE VCE(sat) VBE(sat) fT Cob Cre
VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA VCE = 30V, IC = 10mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz
.339 (8.62) Max Seating Plane
.512 (13.0) Min
.026 (.66) Dia Max
ECB .100 (2.54)
.200 (5.08) Max
.240 (6.09) Max
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