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Details, datasheet, quote on part number:NTE2367
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| Part: | NTE2367 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon Complementary NPN Transistor. Digital W/2 Built-in 4.7k Bias Resistors. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2367 datasheet File size : 25 kB |
| Request For quote: | Find where to buy NTE2367
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Datasheet text preview:
NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 BuiltIn 4.7k Bias Resistors
Features: D BuiltIn Bias Resistor (R1 = 4.7k, R2 = 4.7k) D SmallSized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC NTE2367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW NTE2368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +160°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Symbol ICBO ICEO Emitter Cutoff Current DC Current Gain Current GainBandwidth Product NTE2367 NTE2368 Output Capacitance Cob VCB = 10V, f = 1MHz IEBO hFE fT Test Conditions VCB = 40V, IE = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 10V, IC = 5mA 250 200 3.0 MHz MHz pF Min 170 30 Typ 250 Max 0.1 0.5 330 Unit µA µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter CollectorEmitter Saturation Voltage CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio Symbol VCE(sat) Test Conditions IC = 5mA, IB = 0.25mA Min 50 50 1.0 1.1 3.29 0.9 Typ 0.1 4.7 1.0 Max 0.3 1.5 2.0 6.11 1.1 Unit V V V V V k
V(BR)CBO IC = 10µA, IE = 0 V(BR)CEO IC = 100µA, RBE = VI(off) VI(on) R1 R1/R2 VCE = 5V, IC = 100µA VCE = 200mV, IC = 5mA
Schematic Diagram
Collector (Output) Collector (Output)
R1 Base (Input) R2 Base (Input)
R1
R2
Emitter (GND)
Emitter (GND)
NPN
.165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max
PNP
ECB .050 (1.27) .050 (1.27) .035 (0.9)
.102 (2.6) Max
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