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Details, datasheet, quote on part number:NTE2372
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| Part: | NTE2372 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET P-ch, Enhancement Mode. High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2372 datasheet File size : 28 kB |
| Request For quote: | Find where to buy NTE2372
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Datasheet text preview:
NTE2372 MOSFET PCh, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements D TO220 Case Style Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 Inductive Current, Clamp, ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1°C/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. ISD 3.5A, di/dt 95A/µs, VDD V(BR)DSS, TJ +150°C Note 3. Pules Width 300µs, Duty Cycle 2%.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter DraintoSource Breakdown Voltage Breakdown Voltage Temp. Coefficient Static DraintoSource OnResistance Gate Threshold Voltage Forward Transconductance DraintoSource Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250µA Min 200 2.0 1.0 VDD = 100V, ID = 1.5A, RG = 50, RD = 67, Note 3 Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz Typ 0.22 15 25 20 15 4.5 7.5 350 100 30 Max 1.5 4.0 100 500 100 100 22 12 10 Unit V V/°C V mhos µA µA nA nA nC nC nC ns ns ns ns nH nH pF pF pF
V(BR)DSS Reference to +25°C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 1.5A, Note 3 VDS = VGS, ID = 250µA VDS = 50V, ID = 1.5A, Note3 VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = +125°C VGS = 20V VGS = 20V ID = 4A, VDS = 160V, VGS = 10V, Note 3
GatetoSource Forward Leakage GatetoSource Reverse Leakage Total Gate Charge GatetoSource Charge GatetoDrain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
SourceDrain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time Symbol IS ISM VSD trr Qrr ton Note 1 TJ = +25°C, IS = 3.5A, VGS = 0V, Note 3 TJ = +25°C, IF = 3.5A, di/dt = 100A/µs, Note 3 Test Conditions Min Typ 300 1.9 Max 3.5 14 7.0 450 2.9 Unit A A V ns µC
Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 3. Pulse width 300µs; duty cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
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