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Details, datasheet, quote on part number:NTE2377
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| Part: | NTE2377 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET N-ch, Enhancement Mode. High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2377 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE2377
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Datasheet text preview:
NTE2377 MOSFET NChannel, Enhancement Mode, High Speed
Description: The NTE2377 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Low ONState Resistance D Very HighSpeed Switching D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulsed Drain Current (Note 1), IDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Allowable Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. Pulse Width 10µs, Duty Cycle 1%. Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and source. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter DrainSource Breakdown Voltage ZeroGate Voltage Drain Current GateSource Leakage Current Cutoff Voltage Static DrainSource On Resistance Forward Transconductance Symbol Test Conditions Min 900 2 2.5 Typ 1.2 5.0 Max 1.0 ±100 3 1.6 Unit V mA nA V mho V(BR)DSS ID = 1mA, VGS = 0 IDSS IGSS VGS(off) RDS(on) gf s VGS = 0, VDS = Max Rating VDS = 0, VGS = ±30V VDS = 10V, ID = 1mA VGS = 10V, ID = 4A VDS = 20V, ID = 4A
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Input Capactiance Output Capacitance Reverse Transfer Capactiance TurnOn Time Rise Time TurnOff Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf VSD IS = 8A, VGS = 0 VDD = 200V, ID = 4A, VGS = 10V, RGS = 50 VDS = 20V, f = 1MHz Test Conditions Min Typ 1600 500 350 20 80 350 150 Max 1.8 Unit pf pf pf ns ns ns ns V
.190 (4.82)
.615 (15.62)
D .787 (20.0)
.591 (15.02)
.126 (3.22) Dia
.787 (20.0) G D S
.215 (5.47)
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