|
Details, datasheet, quote on part number:NTE2380
| |
| Part: | NTE2380 |
| Category: | Discrete => Transistors => Bipolar => Power => Complementary |
| Description: | Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2380 datasheet File size : 30 kB |
| Request For quote: | Find where to buy NTE2380
|
| |
Datasheet text preview:
NTE2380 (NCh) & NTE2381 (PCh) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
Description: The NTE2380 (NCh) and NTE2381 (PCh) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Rugged SOA is Power Dissipation Limited D SourcetoDrain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V DrainGate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation (TC = +25°C), PD NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C Operating Temperature Range, Topr NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Storage Temperature Range, Tstg NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, JunctiontoCase, RthJC NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics DrainSource Breakdown Voltage Zero Gate Voltage Drain Current NTE2380 NTE2381 NTE2380 & NTE2381 GateBody Leakage Current, Forward NTE2380 NTE2381 GateBody Leakage Current, Reverse NTE2380 NTE2381 ON Characteristics (Note 1) Gate Threshold Voltage NTE2380 NTE2381 Static DrainSource OnResistance NTE2380 NTE2381 Forward Transconductance NTE2380 NTE2381 Dynamic Characteristics Input Capacitance NTE2380 NTE2381 Output Capacitance NTE2380 NTE2381 Reverse Transfer Capacitance NTE2380 NTE2381 Switching Characteristics (Note 1) TurnOn Time NTE2380 NTE2381 Rise Time NTE2380 NTE2381 TurnOff Time NTE2380 NTE2381 Fall Time NTE2380 NTE2381 tf td(off) tr td(on) ID = 1A, Rgen = 50 VDD [ 200V VDS = 125V VDD [ 200V VDS = 125V VDD [ 200V VDS = 125V VDD [ 200V VDS = 125V 60 50 50 100 60 150 30 50 ns ns ns ns ns ns ns ns Crss 40 80 pF pF Coss 150 200 pF pF Ciss VDS = 25V, VGS = 0, f = 1MHz 400 100 pF pF gFS ID = 1A VDS 7.5V VDS = 15V rDS(on) VGS(th) VDS = VGS ID = 0.25mA ID = 1mA VGS = 10V, ID = 1A 2.0 2.0 1 0.5 4.0 4.5 3 6 V V mhos mhos IGSSR VGSF = 20V, VDS = 0 IGSSF VDS = 400V, VGS = 0, TJ = +125°C VGSF = 20V, VDS = 0 V(BR)DSS VGS = 0, ID = 0.25mA IDSS VDS = 500V, VGS = 0 500 0.25 0.2 1.0 500 100 500 100 V mA mA mA nA nA nA nA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Total Gate Charge NTE2380 NTE2381 GateSource Charge NTE2380 NTE2381 GateDrain Charge NTE2380 NTE2381 Source Drain Diode Characteristics (Note 1) Forward OnVoltage NTE2380 NTE2381 Forward TurnOn Time Reverse Recovery Time NTE2380 NTE2381 Internal Package Inductance Internal Drain Inductance Ld Measured from contact screw on tab to center of die Measured from the drain lead 0.25" from package to center of die Internal Source Inductance Ls Measured from the source lead 0.25" from package to center of pad 3.5 4.5 7.5 nH nH nH ton trr 500 120 ns ns VSD IS = Rated ID, VGS = 0 1.8 1.6 2.5 V V Qgd Qgs Symbol Test Conditions Min Typ Max Unit Switching Characteristics (Cont'd) (Note 1) Qg VGS = 10V, VDS = 400V, ID = Rated ID 12 20 6 10 6 10 15 25 ns ns ns ns ns ns
Limited by stray inductance
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab
|
|
