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Details, datasheet, quote on part number:NTE2382
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| Part: | NTE2382 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET, N-channel Enhancement Mode, High Speed Switch (compl to NTE2383). |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2382 datasheet File size : 27 kB |
| Request For quote: | Find where to buy NTE2382
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Datasheet text preview:
NTE2382 MOSFET NChannel Enhancement Mode, High Speed Switch (Compl to NTE2383)
Description: The NTE2382 is a MOS power NChannel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: DrainSource Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V DrainGate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.2A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5A Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37A Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.2A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W/°C Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Thermal Resistance, CasetoSink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +300°C Note Note Note Note Note 1. 2. 3. 4. 5. TJ = +25° to +150°C Pulse Test: Pulse Width 300µs, Duty Cycle 2%. Repetitive rating: Pulse width limited by max. junction temperature. L = 64mH, VDD = 25V, RG = 25, Starting TJ = +25°C. Mounting surface flat, smooth, and greased.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter DrainSource Breakdown Voltage Zero Gate Voltage Drain Current GateBody Leakage Current, Forward GateBody Leakage Current, Reverse Gate Threshold Voltage Static DrainSource OnResistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge GateSource Charge GateDrain ("Miller") Charge Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Symbol IDSS IGSS IGSS VGS(th) rDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Note 3 TJ = +25°C, IS = 9.2A, VGS = 0V, Note 2 TJ = +25°C, IF = 9.2A, dIF/dt = 100A/µs VGS = 10V, VDS = 80V, ID = 9.2A, Gate charge is essentially independent of operating temperature VDD = 50V, ID = 9.2A, ZO = 18, MOSFET switching times are essentially independent of operating temperature Test Conditions VDS = 100V, VGS = 0 VDS = 80V, VGS = 0, TJ = +125°C VGS = 20V VGS = 20V VDS = VGS, ID = 0.25mA VGS = 10V, ID = 4.6A, Note 2 VDS 50V, ID = 4.6A, Note 2 VDS = 25V, VGS = 0, f = 1MHz Min 100 2.0 2.7 Typ 4.1 400 130 40 8.8 30 19 20 4.6 9.1 110 Max 0.25 1.0 100 100 4.0 0.27 13.0 45 27 30 23 9.2 37 2.5 240 Unit V mA mA nA nA V mhos pF pF pF ns ns ns ns nC nC ns A A V ns V(BR)DSS VGS = 0, ID = 0.25mA
SourceDrain Diode Ratings and Characteristics
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
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