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Details, datasheet, quote on part number:NTE2383
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| Part: | NTE2383 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET, P-channel Enhancement Mode, High Speed Switch (compl to NTE2382). |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2383 datasheet File size : 27 kB |
| Request For quote: | Find where to buy NTE2383
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Datasheet text preview:
NTE2383 MOSFET PChannel Enhancement Mode, High Speed Switch (Compl to NTE2382)
Description: The NTE2383 is a MOS power PChannel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: DrainSource Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V DrainGate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W Thermal Resistance, CasetoSink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +300°C Note Note Note Note Note 1. 2. 3. 4. 5. TJ = +25° to +150°C Pulse Test: Pulse Width 300µs, Duty Cycle 2%. Repetitive rating: Pulse width limited by max. junction temperature. L = 8.5mH, VDD = 25V, RG = 25, Starting TJ = +25°C. Mounting surface flat, smooth, and greased.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter DrainSource Breakdown Voltage Zero Gate Voltage Drain Current GateBody Leakage Current, Forward GateBody Leakage Current, Reverse Gate Threshold Voltage Static DrainSource OnResistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge GateSource Charge GateDrain ("Miller") Charge Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Symbol IDSS IGSS IGSS VGS(th) rDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Note 3 TJ = +25°C, IS = 10.5A, VGS = 0V, Note 2 TJ = +25°C, IF = 10.5A, dIF/dt = 100A/µs VGS = 10V, VDS = 80V, ID = 10.5A, Gate charge is essentially independent of operating temperature VDD = 50V, ID = 10.5A, ZO = 24, MOSFET switching times are essentially independent of operating temperature Test Conditions VDS = 100V, VGS = 0 VDS = 80V, VGS = 0, TJ = +125°C VGS = 20V VGS = 20V VDS = VGS, ID = 0.25mA VGS = 10V, ID = 5.3A, Note 2 VDS 50V, ID = 5.3A, Note 2 VDS = 25V, VGS = 0, f = 1MHz Min 100 2.0 2.0 Typ 835 357 94 12.6 16.6 Max 0.25 1.0 100 100 4.0 0.3 60 140 140 140 58 10.5 42 6.3 300 Unit V mA mA nA nA V mhos pF pF pF ns ns ns ns nC nC ns A A V ns V(BR)DSS VGS = 0, ID = 0.25mA
SourceDrain Diode Ratings and Characteristics
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
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