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Details, datasheet, quote on part number:NTE2384
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| Part: | NTE2384 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET, N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2384 datasheet File size : 25 kB |
| Request For quote: | Find where to buy NTE2384
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Datasheet text preview:
NTE2384 MOSFET NChannel Enhancement Mode, High Speed Switch
Absolute Maximum Ratings: DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Pulsed Drain Current (TC = +25°C), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Continuous Drain Current, ID TC = +30°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Typical Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Static Characteristics DrainSource Breakdown Voltage ZeroGate Voltage Drain Current V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VDD = 30V, ID = 2.6A, VGS = 10V, RGS = 50, Rgen = 50 ID = 250µA, VGS = 0 VGS = 0, VDS = 800V, TJ = +25°C VGS = 0, VDS = 800V, TJ = +125°C GateBody Leakage Current Gate Threshold Voltage Static DrainSource On Resistance Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance TurnOn Time Rise Time TurnOff Delay Time Fall Time VDS = 25V, ID = 3A VDS = 25V, VGS = 0, f = 1MHz 1.8 3.0 3900 200 80 60 90 330 110 5000 350 140 90 140 430 140 mho pf pf pf ns ns ns ns VDS = 0, VGS = ±20V VDS = VGS, ID = 1mA VGS = 10V, ID = 3A 800 2.1 20 0.1 10 3.0 1.3 250 1.0 100 4.0 1.5 V µA mA nA V Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Dynamic Characteristics (Cont'd) Internal Drain Inductance LD Measured from contact screw on header closer to source pin and center of die Measured from the source lead 6mm from package to source bonding pad 5.0 nH Symbol Test Conditions Min Typ Max Unit
Internal Source Inductance
LS
12.5
nH
SourceDrain Diode Ratings and Characteristics Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge IDR IDRM VSD trr Qrr TC = +25°C TC = +25°C IF = 12A, VGS = 0, TJ = +25°C IF = 6A, TJ = +25°C VGS = 0, VR = 100V, TJ = +25°C, diF/dt = 100A/µs, 1.1 1800 25 6 24 1.5 A A V ns µC
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min
.040 (1.02)
Source
1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.215 (5.45)
.430 (10.92)
.188 (4.8) R Max
Gate
.525 (13.35) R Max Drain/Case
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