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Details, datasheet, quote on part number:NTE2385
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| Part: | NTE2385 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET, N-Ch, Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2385 datasheet File size : 29 kB |
| Request For quote: | Find where to buy NTE2385
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Datasheet text preview:
NTE2385 MOSFET NCh, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = +25°C, L = 14mH, RG = 25, IAS = 8A ISD 8A, di/dt 100A/µs, VDD V(BR)DSS, TJ +150°C Pules Width 300µs, Duty Cycle 2%.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter DraintoSource Breakdown Voltage Breakdown Voltage Temp. Coefficient Static DraintoSource OnResistance Gate Threshold Voltage Forward Transconductance DraintoSource Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250µA Min 500 2.0 4.9 VDD = 250V, ID = 8A, RG = 9.1, RD = 31, Note 4 Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz Typ 0.78 14 23 49 20 4.5 7.5 1300 310 120 Max 0.85 4.0 25 250 100 100 63 9.3 32 Unit V V/°C V mhos µA µA nA nA nC nC nC ns ns ns ns nH nH pF pF pF
V(BR)DSS Reference to +25°C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 4.8A, Note 4 VDS = VGS, ID = 250µA VDS = 50V, ID = 4.8A, Note 4 VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = +125°C VGS = 20V VGS = 20V ID = 8A, VDS = 400V, VGS = 10V, Note 4
GatetoSource Forward Leakage GatetoSource Reverse Leakage Total Gate Charge GatetoSource Charge GatetoDrain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
SourceDrain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time Symbol IS ISM VSD trr Qrr ton Note 2 TJ = +25°C, IS = 8A, VGS = 0V, Note 4 TJ = +25°C, IF = 8A, di/dt = 100A/µs, Note 4 Test Conditions Min Typ 460 4.2 Max 8 32 2.0 970 8.9 Unit A A V ns µC
Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 300µs; duty cycle 2%.
.420 (10.67) Max
.110 (2.79)
Drain .147 (3.75) Dia Max .500 (12.7) Max
.250 (6.35) Max
.500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain
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