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Details, datasheet, quote on part number:NTE2386
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| Part: | NTE2386 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET, N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2386 datasheet File size : 28 kB |
| Request For quote: | Find where to buy NTE2386
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Datasheet text preview:
NTE2386
MOSFET NChannel Enhancemen Mode, High Speed Switch
Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. Features: · Repetitive Avalanche Ratings · Dynamic dv/dt Rating · Simple Drive Requirements · Ease of Paralleling Absolute Maximum Ratings: Continuous Drain Current, ID (TC = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A (TC = +100°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Maximum Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W (Derate linearly above +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mJ Avalanche Current (Repetitive or NonRepetitive, Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V/mS Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case for 10s), TL . . . . . . . . . . +300°C
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Breakdown Voltage DraintoSource Static DraintoSource OnState Resistance OnState Drain Current Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Symbol
BVDSS RDS(on) ID(on) VGS(HL) gs IDSS
Test Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 3.4A, Note 4 VDS > ID(on) x RDS(on) Max, VGS = 10V, Note 4 VDS = VGS, ID = 250µA VDS = 60V, IDC = 3.4A, Note 4 VDS = Max. Rating VCS = 0V VDS = 0.8 x Max Rating , VSS = 0V, TJ = 125°C
Min
600 6.2 2.0 4.7
Typ
0.97 70 4.0 6.5 20 1.3 18 65 20 5.0
Max
1.2 4.0 250 1000 100 100 80 8.2 30 20 27 83 20
Unit
V A V mhos µA
Forward Leakage Current GatetoSource Reverse Leakage Current GatetoSource Total Gate Charge GatetoSource Charge GatetoDrain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Internal Drain Inductance
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
VGS = 20V VGS = 20V VGS = 10V, ID = 6.2A, VDS = 0.8 x Max Rating (independent of operating temperature)
nA nA nC nC nC ns
VDD = 300V, fD = 6.2A, RG = 9.1, RD = 47 (independent at operating temperature) Measured from the drain lead, 6mm (0.25 In) from packaged to center of die. Measured from the source lead, 6mm (0.25 in) from package to source bonding pad. VGS = 0V, VDS = 25V, f = 1.0MHz
nH
Internal Source Inductance
LS
18
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
1300 150 30
pF
SourceDrain Diode Ratings and Characteristics:
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Forward TurnOn Time
Symbol
IS ISM VSO trr ton Note 1
Test Conditions
Min
1.8
Typ
3.6
Max
6.2 26 1.5 7.9
Unit
A A V µC
TJ = 25°C, IS = 6.2A, VGS = 0V, Note 4 TJ = 25°C, IF = 6.2A di/dt = 100A/µs
Intrinsic turnon time is negligible Turn on speed is substantially controlled by LS + LD
Thermal Resistance:
Parameter
JunctiontoCase CasetoSink JunctiontoAmbient
Symbol
RthJC RthCS RthJA
Test Conditions
Min
Typ
0.12
Max
1.0 30
Unit
°C/W °C/W °C/W
Mounting surface flat, smooth, and greased Typical socket mount
Note Note Note Note
1. 2. 3. 4.
Repetitive Rating: Pulse Width limited by maximum junction temperature. VDD = 60V, Starting TJ = 25°C, L = 27mH, RG = 25, Peak IC = 6.2A ISD 6.2A, di/dt = 80A/µs VDD 3VDSS, TJ 150°C, Suggested RG = 9.1 Pulse width 300µs: Duty Cycle 2%.
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min
.040 (1.02)
Source
1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.215 (5.45)
.430 (10.92)
.188 (4.8) R Max
Gate
.525 (13.35) R Max Drain/Case
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