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Details, datasheet, quote on part number:NTE2387
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| Part: | NTE2387 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET, N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2387 datasheet File size : 24 kB |
| Request For quote: | Find where to buy NTE2387
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Datasheet text preview:
NTE2387 MOSFET NChannel Enhancement Mode, High Speed Switch
Absolute Maximum Ratings: DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Pulsed Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Typical Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Static Characteristics DrainSource Breakdown Voltage ZeroGate Voltage Drain Current V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VDD = 30V, ID = 2.3A, VGS = 10V, RGS = 50, Rgen = 50 ID = 250µA, VGS = 0 VGS = 0, VDS = 800V, TC = +25°C VGS = 0, VDS = 800V, TC = +125°C GateBody Leakage Current Gate Threshold Voltage Static DrainSource On Resistance Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance TurnOn Time Rise Time TurnOff Delay Time Fall Time VDS = 25V, ID = 1.5A VDS = 25V, VGS = 0, f = 1MHz 3.0 4.3 1000 80 30 10 25 130 40 1250 120 50 25 40 150 60 mho pf pf pf ns ns ns ns VDS = 0, VGS = ±30V VDS = VGS, ID = 1mA VGS = 10V, ID = 1.5A 800 2.1 2 0.1 10 3.0 2.7 20 1.0 100 4.0 3.0 V µA mA nA V Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Dynamic Characteristics (Cont'd) Internal Drain Inductance LD Measured from contact screw on tab to center of die Measured from drain lead 6mm from package to center of die Internal Source Inductance LS Measured from the source lead 6mm from package to source bonding pad 3.5 4.5 7.5 nH nH nH Symbol Test Conditions Min Typ Max Unit
SourceDrain Diode Ratings and Characteristics Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge IDR IDRM VSD trr Qrr IF = 4A, VGS = 0 IF = 4A, diF/dt = 100A/µs, VGS = 0, VR = 100V 1.0 1800 12 4 16 1.3 A A V ns µC
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
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