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Details, datasheet, quote on part number:NTE2388
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| Part: | NTE2388 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET. N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2388 datasheet File size : 27 kB |
| Request For quote: | Find where to buy NTE2388
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Datasheet text preview:
NTE2388 MOSFET NChannel Enhancement Mode, High Speed Switch
Description: The NTE2388 is an NChannel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Low rDS(on) to Minimize OnLosses. Specified at Elevated Temperatures. D Rugged SOA is Power Dissipation Limited D SourcetoDrain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Peak TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C Maximum Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Maximum Lead Temperature (During soldering, 1/8" from case for 5sec), TL . . . . . . . . . . . . +300°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics DrainSource Breakdown Voltage ZeroGate Voltage Drain Current V(BR)DSS ID = 250µA, VGS = 0 IDSS VGS = 0, VDS = Max Rating VGS = 0, VDS = 160V, TC = +125°C GateBody Leakage Current, Forward GateBody Leakage Current, Reverse ON Characteristics (Note 1) Gate Threshold Voltage Static DrainSource On Resistance OnState Drain Current Forward Transconductance Dynamic Characteristics Input Capactiance Output Capacitance Reverse Transfer Capactiance Switching Characteristics (Note 1) TurnOn Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge GateSource Charge GateDrain Charge Forward ON Voltage Forward TurnOn Time Reverse Recovery Time Internal Package Inductance Internal Drain Inductance Ld Measured from the contact screw on tab to center of die Measured from the drain lead 0.25" from package to center of die Internal Source Inductance Ls Measured from the source lead 0.25" from package to source bond pad 3.5 4.5 nH nH td(on) tr td(off) tf Qg Qgs Qgd VSD ton trr IS = Rated ID, VGS = 0 VDS = 160V, VGS = 10V, ID = Rated ID VDD [ 75V, ID = 10APEAK, Rg = 4.7 38 16 22 1.8 450 30 60 80 60 60 2.0 ns ns ns ns nC nC nC V ns Ciss Coss Crss VDS = 25V, VGS = 0, f = 1MHz 1600 750 300 pf pf pf VGS(th) RDS(on) ID(on) gfs VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VGS = 10V, VDS 3.2V VDS 3.2V, ID = 10A 2 18 6 4 0.18 V A mhos IGSSF IGSSR VDS = 0, VGSF = 20V VDS = 0, VGSR = 20V 200 200 1000 100 100 V µA µA nA nA Symbol Test Conditions Min Typ Max Unit
Source Drain Diode Characteristics (Note 1) Limited by stray inductance
7.5
nH
Note 1. Pulse test: Pulse width 300µs, Duty cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
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