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Details, datasheet, quote on part number:NTE2389
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| Part: | NTE2389 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET. N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2389 datasheet File size : 24 kB |
| Request For quote: | Find where to buy NTE2389
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Datasheet text preview:
NTE2389 MOSFET NCh, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +175°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W Typical Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Static Ratings DrainSource Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current GateSource Leakage Current DrainSource OnState Resistance Dynamic Ratings Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance gf s Ciss Coss Crss ID = 20A, VDS = 25V VDS = 25V, VGS = 0, f = 1MHz 8 13.5 560 300 750 400 mhos pF pF pF 1650 2000 BVDSS VGS(th) IDSS IGSS ID = 0.25mA, VGS = 0 ID = 1mA, VDS = VGS VDS = 60V, VGS = 0 TJ = +25°C TJ = +125°C 60 2.1 3.0 1 0.1 10 40 4.0 10 1.0 100 45 V V µA mA nA m Symbol Test Conditions Min Typ Max Unit
VGS = ±30V, VDS = 0
RDS(on) ID = 20A, VGS = 10V
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Dynamic Ratings (Cont'd) TurnOn Time TurnOff Time Internal Drain Inductance td (on) tr td (off) tf Ld Measured from contact screw on tab to center of die Measured from drain lead 6mm from package to center of die Internal Source Inductance Ls Measured from source lead 6mm from package to source bond pad VCC = 30V, VGS = 10V, ID = 3A, RGS = 50 25 60 125 100 3.5 4.5 7.5 40 90 160 130 ns ns ns ns nH nH nH Symbol Test Conditions Min Typ Max Unit
Reverse Diode Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward OnVoltage Reverse Recovery Time Reverse Recovery Charge IDR IDRM VSD trr Qrr IF = 41A, VGS = 0 IF = 41A, VGS = 0, VR = 30V diF/dt = 100A/µs 1.4 60 0.3 41 164 2.0 A A V ns µC
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min
.070 (1.78) Max Gate .100 (2.54)
Source Drain/Tab
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