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Details, datasheet, quote on part number:NTE2390
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| Part: | NTE2390 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET. N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2390 datasheet File size : 27 kB |
| Request For quote: | Find where to buy NTE2390
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Datasheet text preview:
NTE2390 MOSFET NChannel Enhancement Mode, High Speed Switch
Description: The NTE2390 is an NChannel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged SOA is Power Dissipation Limited D SourcetoDrain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V DrainGate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30°C/W Maximum Lead Temperature (During soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics DrainSource Breakdown Voltage ZeroGate Voltage Drain Current V(BR)DSS ID = 0.25mA, VGS = 0 IDSS IGSSF IGSSR VGS(th) rDS(on) VDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ton trr Ld Measured from the contact screw on tab to center of die Measured from the drain lead 0.25" from package to center of die Internal Source Inductance Ls Measured from the source lead 0.25" from package to source bond pad IS = Rated ID, VGS = 0 VDS = 48V, VGS = 10V, ID = Rated ID VDD = 25V, ID = 0.5 Rated ID, Rgen = 50 VGS = 0, VDS = Max Rating VGS = 0, VDS = 48V, TJ = +125°C GateBody Leakage Current, Forward GateBody Leakage Current, Reverse ON Characteristics (Note 1) Gate Threshold Voltage VDS = VGS, ID = 1mA VDS = VGS, ID = 1mA, TJ = +100°C Static DrainSource On Resistance DrainSource ONVoltage VGS = 10V, ID = 6A VGS = 10V, ID = 12A VGS = 10V, ID = 6A, TJ = 100°C Forward Transconductance Dynamic Characteristics Input Capactiance Output Capacitance Reverse Transfer Capactiance VDS = 25V, VGS = 0, f = 1MHz 400 300 100 pf pf pf VDS = 15V, ID = 6A 2.0 1.5 4 4.5 4.0 0.2 3.0 2.8 V V V V mhos VDS = 0, VGSF = 20V VDS = 0, VGSR = 20V 60 0.2 1.0 100 100 V mA mA nA nA Symbol Test Conditions Min Typ Max Unit
Switching Characteristics (TJ = +100°C, Note 1) TurnOn Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge GateSource Charge GateDrain Charge 13 6 7 60 160 80 110 26 ns ns ns ns nC nC nC
Source Drain Diode Characteristics (Note 1) Forward ON Voltage Forward TurnOn Time Reverse Recovery Time Internal Package Inductance Internal Drain Inductance 3.5 4.5 7.5 nH nH nH 1.8 3.2 V
Limited by stray inductance 300 ns
Note 1. Pulse test: Pulse width 300µs, Duty cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
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