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Details, datasheet, quote on part number:NTE2392
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| Part: | NTE2392 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET. N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2392 datasheet File size : 28 kB |
| Request For quote: | Find where to buy NTE2392
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Datasheet text preview:
NTE2392 MOSFET NChannel Enhancement Mode, High Speed Switch
Description: The NTE2392 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: DrainSource Voltage (Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V DrainGate Voltage (RGS = 20k, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Pulsed Drain Current (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Clamped Inductive Current (L = 100µH), ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), TL . . . . . . . . . . +300°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W Typical Thermal Resistance, CasetoSink (Note 4), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30°C/W Note Note Note Note 1. 2. 3. 4. TJ = +25° to +150°C Pulse test: Pulse Width 300µs, Duty Cycle 2%. Repetitive Rating: Pulse width limited by maximum junction temperature. Mounting surface flat, smooth, and greased.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter DrainSource Breakdown Voltage ZeroGate Voltage Drain Current Symbol V(BR)DSS IDSS Test Conditions ID = 250µA, VGS = 0 VGS = 0, VDS = 100V VGS = 0, VDS = 80V, TC = +125°C GateBody Leakage Current Gate Threshold Voltage OnState Drain Current Static DrainSource On Resistance Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance TurnOn Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge GateSource Charge GateDrain ("Miller") Charge Internal Drain Inductance IGSS VGS(th) ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD Measured between the contact screw on header that is closer to source and gate pins and center of die Measured from the source pin, 6mm (.25 in.) from header VGS = 10V, ID = 50A, VDS = 80V VDD = 24V, ID = 20A, RI = 4.7 VDS = 0, VGS = ±20V VDS = VGS, ID = 250µA VDS > ID(on) x RDS(on) max, VGS = 10V, Note 2 VGS = 10V, ID = 20A, Note 2 VDS > ID(on) x RDS(on) max, ID = 20A, Note 2 VDS = 25V, VGS = 0, f = 1MHz Min 100 2 40 9 Typ 0.045 11 2000 1000 350 63 27 36 5.0 Max 250 1000 ±100 4 0.055 3000 1500 500 35 100 125 100 120 Unit V µA µA nA V A W mho pf pf pf ns ns ns ns nC nC nC nH
Internal Source Inductance
LS
12.5
nH
SourceDrain Diode Ratings and Characteristics Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Forward ON Voltage Reverse Recovery Time Reverse Recovered Charge IS ISM VSD trr Qrr Note 3 IS = 40A, VGS = 0, TJ = +25°C, Note 3 IF = 40A, diF/dt = 100A/µs, TJ = +150°C ° 600 3.3 40 160 2.5 A A V ns µC
Note 2. Pulse test: Pulse Width 300µs, Duty Cycle 2%. Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min
.040 (1.02)
Source
1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.215 (5.45)
.430 (10.92)
.188 (4.8) R Max
Gate
.525 (13.35) R Max Drain/Case
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