Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:

Details, datasheet, quote on part number:NTE2393
 
 
Part:NTE2393
Category:Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
Description:MOSFET. N-channel Enhancement Mode, High Speed Switch.
Company:NTE Electronics, Inc.
Datasheet:Download NTE2393 datasheet   File size : 25 kB
Request For quote:  Find where to buy NTE2393
 



Datasheet text preview:
NTE2393 MOSFET N­Channel Enhancement Mode, High Speed Switch
Description: The NTE2393 is an N­Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 500V for Off­Line SMPS D High Current: 9A for up to 350W SMPS D Ultra Fast Switching for Operation at less than 100kHz Industrial Applications: D Switching Mode Power Supplies D Motor Controls Absolute Maximum Ratings: Drain­Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain­Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate­Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Clamped Drain Inductive Current (Note 1), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/°C Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­65° to +150°C Maximum Thermal Resistance, Junction­to­Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C Note 1. Pulse width limited by safe operating area.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics Drain­Source Breakdown Voltage Zero­Gate Voltage Drain Current V(BR)DSS ID = 250µA, VGS = 0 IDSS VGS = 0, VDS = Max Rating VGS = 0, VDS = 400V, TC = +125°C Gate­Body Leakage Current ON Characteristics (Note 2) Gate Threshold Voltage Static Drain­Source On Resistance VGS(th) RDS(on) VDS = VGS, ID = 250µA VGS = 10V, ID = 4.5A VGS = 10V, ID = 4.5A, TC = 100°C Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Switching Characteristics Turn­On Time Rise Time Turn­Off Delay Time Fall Time Source Drain Diode Characteristics Source­Drain Current Source­Drain Current (Pulsed) Forward ON Voltage Reverse Recovery Time ISD ISDM VSD trr Note 2 ISD = 9A, VGS = 0 IDS = 9A, VGS = 0, di/dt = 100A/µs ­ ­ ­ ­ ­ ­ ­ 420 9 36 1.15 ­ A A V ns td(on) tr td(off) tf VDD = 250V, ID = 4.5A, RI = 4.7, VI = 10V ­ ­ ­ ­ 30 40 130 30 40 60 170 40 ns ns ns ns gf s Ciss Coss Crss VDS = 25V, ID = 4.5A VDS = 25V, VGS = 0, f = 1MHz 5 ­ ­ ­ ­ ­ mho pf pf pf 2 ­ ­ ­ ­ ­ 4 0.7 1.4 V IGSS VDS = 0, VGS = ±20V 500 ­ ­ ­ ­ ­ ­ ­ ­ 250 1000 ±100 V µA µA nA Symbol Test Conditions Min Typ Max Unit
1600 1900 ­ ­ 280 170
Note 2. Pulse width limited by safe operating area. Note 3. Pulsed: Pulse Duration = 300µs, Duty Cycle 1.5%
.190 (4.82)
.615 (15.62)
D .787 (20.0)
.591 (15.02)
.126 (3.22) Dia
.787 (20.0) G D S
.215 (5.47)