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Details, datasheet, quote on part number:NTE2394
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| Part: | NTE2394 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET. N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2394 datasheet File size : 26 kB |
| Request For quote: | Find where to buy NTE2394
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Datasheet text preview:
NTE2394 MOSFET NChannel Enhancement Mode, High Speed Switch
Description: The NTE2394 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 450V for OffLine SMPS D High Current: 12A for up to 350W SMPS D Ultra Fast Switching for Operation at less than 100kHz Industrial Applications: D Switching Mode Power Supplies D Motor Controls Absolute Maximum Ratings: DrainSource Voltage (VGS = 0, Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V DrainGate Voltage (RGS = 20k, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Clamped Drain Inductive Current (L = 100µH), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8A Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.44W/°C Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. TJ = +25° to +125°C Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Thermal Data: Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69°C/W Typical Thermal Resistance, CasetoSink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30°C/W Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics DrainSource Breakdown Voltage ZeroGate Voltage Drain Current V(BR)DSS ID = 250µA, VGS = 0 IDSS VGS = 0, VDS = Max Rating VGS = 0, VDS = 400V, TC = +125°C GateBody Leakage Current ON Characteristics (Note 3) Gate Threshold Voltage OnState Drain Current Static DrainSource On Resistance Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Switching Characteristics TurnOn Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge Source Drain Diode Characteristics SourceDrain Current SourceDrain Current (Pulsed) Forward ON Voltage Reverse Recovery Time Reverse Recovered Charge ISD ISDM VSD trr Qrr Note 3 ISD = 14A, VGS = 0 IDS = 14A, di/dt = 100A/µs, TJ = +150°C ° 1300 7.4 14 56 1.4 A A V ns µC td(on) tr td(off) tf Qg VGS = 10V, ID = 13A, VDS = 400V VDD = 210V, ID = 7.0A, RI = 4.7 35 50 150 70 120 ns ns ns ns nC gf s Ciss Coss Crss VDS > ID(on) x RDS(on) max, ID = 7.9A, Note 4 VDS = 25V, VGS = 0, f = 1MHz 9.3 3000 600 200 mho pf pf pf VGS(th) ID(on) RDS(on) VDS = VGS, ID = 250µA VDS > ID(on) x RDS(on) max, VGS = 10V VGS = 10V, ID = 7.9A 2 14 4 0.4 V A IGSS VDS = 0, VGS = ±20V 500 250 1000 ±500 V µA µA nA Symbol Test Conditions Min Typ Max Unit
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulsed: Pulse Duration = 300µs, Duty Cycle 1.5%
.190 (4.82)
.615 (15.62)
D .787 (20.0)
.591 (15.02)
.126 (3.22) Dia
.787 (20.0) G D S
.215 (5.47)
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