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Details, datasheet, quote on part number:NTE2396
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| Part: | NTE2396 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET. N-channel Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2396 datasheet File size : 29 kB |
| Request For quote: | Find where to buy NTE2396
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Datasheet text preview:
NTE2396 MOSFET NCh, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Current Sense D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +175°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 25V, starting TJ = +25°C, L = 191µH, RG = 25, IAS = 28A Note 3. ISD 28A, di/dt 170A/µs, VDD V(BR)DSS, TJ +175°C
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter DraintoSource Breakdown Voltage Breakdown Voltage Temp. Coefficient Static DraintoSource OnResistance Gate Threshold Voltage Forward Transconductance DraintoSource Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250µA Min 100 2.0 5.8 VDD = 50V, ID = 29A, RG = 9.1, RD = 1.7, Note 4 Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz Typ 0.13 13 77 40 48 4.5 7.5 1300 630 130 Max 0.077 4.0 25 250 100 100 69 13 37 Unit V V/°C V mhos µA µA nA nA nC nC nC ns ns ns ns nH nH pF pF pF
V(BR)DSS Reference to +25°C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 17A, Note 4 VDS = VGS, ID = 250µA VDS = 50V, ID = 17A, Note 4 VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = +150°C VGS = 20V VGS = 20V ID = 29A, VDS = 80V, VGS = 10V, Note 4
GatetoSource Forward Leakage GatetoSource Reverse Leakage Total Gate Charge GatetoSource Charge GatetoDrain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
SourceDrain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time Symbol IS ISM VSD trr Qrr ton Note 1 TJ = +25°C, IS = 28A, VGS = 0V, Note 4 TJ = +25°C, IF = 29A, di/dt = 100A/µs, Note 4 Test Conditions Min Typ 120 0.52 Max 28 110 2.5 260 1.2 Unit A A V ns µC
Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 300µs; duty cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
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