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Details, datasheet, quote on part number:NTE2578
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Datasheet text preview:
NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output
Features: D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage Fall Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 40V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A VCE = 5V, IC = 1A IC = 4A, IB = 400mA IC = 4A, IB = 400mA Min 30 25 200 60 6 Typ 10 0.5 0.2 Max 0.1 0.1 60 1.0 1.5 0.5 MHz V V V V V µs Unit mA mA
V(BR)CBO IC = 5mA, IE = 0 V(BR)EBO IC = 5mA, IC = 0 tf VCC = 50V, VBB = 5V, IC = 5A, IB1 = IB2 = 500mA, PW = 20µs, Duty Cycle 2.5%
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
B
C
E
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
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