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Details, datasheet, quote on part number:NTE2580
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| Part: | NTE2580 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. High Voltage, High Current Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2580 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE2580
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Datasheet text preview:
NTE2580 Silicon NPN Transistor High Voltage, High Current Switch
Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. Pulse Test: Pulsed Width 300µs, Duty Cycle 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 800mA VCE = 5V, IC = 4A VCE = 5V, IC = 10mA GainBandwidth Product Output Capacitance Collector Emitter Saturation Voltage fT Cob VCE(sat) VCE = 10V, IC = 800mA VCB = 10V, f = 1MHz IC = 4A, IB = 800mA Min 20 10 10 Typ 20 80 Max 10 10 50 0.8 MHz pF V Unit µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Base Emitter Saturation Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Sustaining Voltage TurnOn Time Storage Time Fall Time Symbol VBE(sat) Test Conditions IC = 4A, IB = 800mA Min 500 400 7 400 Typ 0.5 2.5 0.3 Max 1.5 Unit V V V V V µs µs µs
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEX(sus) IC = 3A, IB1 = 0.3A, L = 1mH, IB2 = 1.2A, Clamped ton tstg tf VCC = 200V, IC = 5A, IB1 = 1A, IB2 = 2A, RL = 40
.402 (10.2)
.035 (0.9)
.177 (4.5) .051 (1.3)
.346 (8.8) B C E
.433 (11.0) .019 (0.5)
.100 (2.54)
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