|
Details, datasheet, quote on part number:NTE2581
| |
Datasheet text preview:
NTE2581 Silicon NPN Transistor High Speed Switching Regulator
Features: D High Breakdown Voltage and High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. Pulse Width 300µs, Duty Cycle 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.6A VCE = 5V, IC = 8A VCE = 5V, IC = 10mA Current GainBandwidth Product Output Capacitance CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage fT Cob VCE(sat) VBE(sat) VCE = 10V, IC = 1.6A VCB = 10V, f = 1MHz IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A Min 20 10 10 Typ 20 160 Max 10 10 40 0.8 1.5 MHz pF V V Unit µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage CollectorEmitter Sustaining Voltage TurnOn Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus) ton tstg tf Test Conditions IC = 1mA, IE = 0 IC = 10mA, RBE = IE = 1mA, IC = 0 IC = 6A, IB1 = 0.6A, IB2 = 2.4A, L = 500µH, Clamped IC = 10A, IB1 = 2A, IB2 = 4A, RL = 20, VCC = 200V, Note 2 Min 500 400 7 400 Typ Max 0.5 2.5 0.3 Unit V V V V µs µs µs
Note 2. Pulse Width = 20µs, Duty Cycle 1%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab
|
|
