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Details, datasheet, quote on part number:NTE2582
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| Part: | NTE2582 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. High Speed Switching Regulator. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2582 datasheet File size : 24 kB |
| Request For quote: | Find where to buy NTE2582
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Datasheet text preview:
NTE2582 Silicon NPN Transistor High Speed Switching Regulator
Features: D High Breakdown Voltage and High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. Pulse Width 300µs, Duty Cycle 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.6A VCE = 5V, IC = 8A VCE = 5V, IC = 10mA Current GainBandwidth Product Output Capacitance CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage fT Cob VCE(sat) VBE(sat) VCE = 10V, IC = 1.6A VCB = 10V, f = 1MHz IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A Min 20 10 10 Typ 20 160 Max 10 10 50 0.8 1.5 MHz pF V V Unit µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage CollectorEmitter Sustaining Voltage TurnOn Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO Test Conditions IC = 1mA, IE = 0 IC = 10mA, RBE = IE = 1mA, IC = 0 Min 500 400 7 400 Typ Max 0.5 2.5 0.3 Unit V V V V µs µs µs
VCEX(sus) IC = 6A, IB1 = 0.6A, IB2 = 2.4A, L = 500µH, Clamped ton tstg tf IC = 10A, IB1 = 2A, IB2 = 4A, RL = 20, VCC = 200V, Note 2
Note 2. Pulse Width = 20µs, Duty Cycle 1%.
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
B
C
E
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
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