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Details, datasheet, quote on part number:NTE2586
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| Part: | NTE2586 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. High Voltage, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2586 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE2586
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Datasheet text preview:
NTE2586 Silicon NPN Transistor High Voltage, High Speed Switch
Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. Pulse Test: Pulsed Width 300µs, Duty Cycle 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain GainBandwidth Product Output Capacitance Collector Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC =200mA VCE = 5V, IC = 1A VCE = 10V, IC = 200mA VCB = 10V, f = 1MHz IC = 1.5A, IB = 300mA Min 15 8 Typ 15 60 Max 10 10 40 2.0 MHz pF V Unit µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Base Emitter Saturation Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Sustaining Voltage TurnOn Time Storage Time Fall Time Symbol VBE(sat) Test Conditions IC =1.5A, IB = 300mA Min 1100 800 7 800 Typ Max 1.5 0.5 3.0 0.3 Unit V V V V V µs µs µs
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA, L = 2mH, Clamped ton tstg tf VCC = 400V, IC = 2A, IB1 = 0.4A, IB2 = 0.8A, RL = 200
.402 (10.2)
.035 (0.9)
.177 (4.5) .051 (1.3)
.346 (8.8) B C E
.433 (11.0) .019 (0.5)
.100 (2.54)
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