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Details, datasheet, quote on part number:NTE2592
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| Part: | NTE2592 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. Horizontal Output For Hdtv. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2592 datasheet File size : 22 kB |
| Request For quote: | Find where to buy NTE2592
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Datasheet text preview:
NTE2592 Silicon NPN Transistor Horizontal Output for HDTV
Features: D High Breakdown Voltage: V(BR)CBO = 2000V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage Output Capacitance Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 1800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 300µA VCE = 10V, IC = 300µA IC = 600µA, IB = 120µA IC = 600µA, IB = 120µA Min 10 2000 1800 5 6 1.8 Typ Max 1 1 60 5 2 MHz V V V V V pF Unit µA µA
V(BR)CBO IC = 100µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 Cob VCB = 100V, f = 1MHz
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 100µA, RBE =
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
B
C
E
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
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