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Details, datasheet, quote on part number:NTE2593
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| Part: | NTE2593 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. High Voltage Amp/switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2593 datasheet File size : 22 kB |
| Request For quote: | Find where to buy NTE2593
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Datasheet text preview:
NTE2593 Silicon NPN Transistor High Voltage Amp/Switch
Features: D High Breakdown Voltage: V(BR)CEO = 2100V Min D Low Output Capacitance D Wide ASO Range D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage Output Capacitance Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 2100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500µA VCE = 10V, IC = 500µA IC = 1mA, IB = 200µA IC = 1A, IB = 200µA Min 10 2100 2100 5 6 1.3 Typ Max 1 1 60 5 2 MHz V V V V V pF Unit µA µA
V(BR)CBO IC = 10µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 Cob VCB = 100V, f = 1MHz
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 100µA, RBE =
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
B
C
E
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
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