Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:

Details, datasheet, quote on part number:NTE2594
 
 
Part:NTE2594
Category:Discrete => Transistors => Bipolar => General Purpose
Description:Silicon NPN Transistor. High Voltage,high Current Switch.
Company:NTE Electronics, Inc.
Datasheet:Download NTE2594 datasheet   File size : 21 kB
Request For quote:  Find where to buy NTE2594
 



Datasheet text preview:
NTE2594 Silicon NPN Transistor High Voltage, High Current Switch
Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Pulsed (PW 300µs, Duty Cycle 10%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.2A VCE = 5V, IC = 6A Gain Bandwidth Product Output Capacitance Collector­Emitter Saturation Voltage Base­Emitter Saturation Voltage Collector­Base Breakdown Voltage Collector­Emitter Breakdown Voltage Emitter­Base Breakdown Voltage VCE = 10V, IC = 1.2A VCB = 10V, f = 1MHz IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A Min ­ ­ 15 8 ­ ­ ­ ­ 800 500 7 Typ ­ ­ ­ ­ 18 160 ­ ­ ­ ­ ­ Max Unit 10 10 50 ­ ­ ­ 1.0 1.5 ­ ­ ­ MHz pF V V V V V µA µA
V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Collector­Emitter Sustaining Voltage Turn­On Time Storage Time Fall Time Symbol Test Conditions Min 500 ­ ­ ­ Typ ­ ­ ­ ­ Max Unit ­ 0.5 3.0 0.3 V µs µs µs VCEX(sus) IC = 5A, IB1 = IB2 = 2A, L = 500µH, Clamped ton tstg tf 5IB1 = ­2.5IB2 = IC = 7A, VCC = 200V, RL = 28.6
.221 (5.6) .123 (3.1)
.134 (3.4) Dia .630 (16.0)
.315 (8.0)
C
.866 (22.0)
B
C
E
.158 (4.0)
.804 (20.4)
.215 (5.45)
.040 (1.0)