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Details, datasheet, quote on part number:NTE2597
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| Part: | NTE2597 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. High Voltage, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2597 datasheet File size : 24 kB |
| Request For quote: | Find where to buy NTE2597
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Datasheet text preview:
NTE2597 Silicon NPN Transistor High Voltage, High Speed Switch
Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation, PD TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage Symbol ICBO IEBO hFE VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE = 5V, IC = 4A IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A Min 10 8 Typ Max 10 10 40 2.0 1.5 V V Unit µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter GainBandwidth Product Output Capacitance CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage CollectorEmitter Sustaining Voltage TurnOn Time Storage Time Fall Time Symbol fT Cob Test Conditions VCE = 10V, IC = 0.8A VCB = 10V, f = 1MHz Min 1100 800 7 800 Typ 15 215 Max 0.5 3.0 0.3 Unit MHz pF V V V V µs µs µs
V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 VCEX(sus) IC = 6A, IB1 = 1.2A, IB2 = 1.2A, L = 500µH Clamped ton tstg tf IC = 8A, IB1 = 1.6A, IB2 = 3.2A, RL = 50, VCC = 400V
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE =
.221 (5.6) .123 (3.1)
.134 (3.4) Dia .630 (16.0)
.315 (8.0) .866 (22.0)
B .158 (4.0)
C
E
.804 (20.4)
.215 (5.45)
.040 (1.0)
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