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Details, datasheet, quote on part number:NTE2598
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| Part: | NTE2598 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. High Voltage, High Current Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2598 datasheet File size : 25 kB |
| Request For quote: | Find where to buy NTE2598
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Datasheet text preview:
NTE2598 Silicon NPN Transistor High Voltage, High Current Switch
Features: D High Breakdown Voltage, Reliability D fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain GainBandwidth Product Output Capacitance CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.6A VCE = 5V, IC = 8A VCE = 10V, IC = 1.6A VCB = 10V, f = 1MHz IC = 12A, IB = 2.4A IC = 12A, IB = 2.4A Min 15 8 Typ 15 470 Max Unit 10 10 40 2.0 1.5 MHz pF V V µA µA
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage CollectorEmitter Sustaining Voltage TurnOn Time Storage Time Fall Time Symbol Test Conditions Min 1100 800 7 800 Typ Max Unit 0.5 3.0 0.3 V V V V µs µs µs V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 10A, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEO(sus) IC = 12A, IB1 = IB2 = 2.4A, l = 50µH, Clamped ton tstg tf VCC = 400V, 5IB1 = 2.5IB2 = IC = 20A, RL = 20
.810(20.57) Max .236 (6.0)
.204 (5.2)
1.030 (26.16) .137 (3.5) Dia Max
.098 (2.5)
.787 (20.0)
.215 (5.45)
.040 (1.0)
.023 (0.6)
B
C
E
Note: Collector connected to heat sink.
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