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Details, datasheet, quote on part number:NTE263
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| Part: | NTE263 |
| Category: | Discrete => Transistors => Bipolar => Darlington |
| Description: | Silicon Complementary Transistors Darlington Power Amplifier |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE263 datasheet File size : 25 kB |
| Request For quote: | Find where to buy NTE263
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Datasheet text preview:
NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and lowspeed switching applications. Features: D High DC Current Gain: = 2500 Typ (NTE263) hF E = 3500 Typ (NTE264) D CollectorEmitter Sustaining Voltage: VCEO(sus) = 100V Min D Low CollectorEmitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics CollectorEmitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 ICEO ICEX Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE VCE(sat) VBE(on) IC = 5A, VCE = 3V IC = 10A, VCE = 3V CollectorEmitter Saturation Voltage IC = 5A, IB = 0.01A IC = 10A, IB = 0.1A BaseEmitter ON Voltage IC = 3A, VCE = 3V IC = 10A, VCE = 3V Dynamic Characteristics SmallSignal Current Gain Output Capacitance SmallSignal Current Gain |hfe| Cob hfe IC = 1A, VCE = 5V, ftest = 1MHz VCB = 10V, IE = 0, f = 1MHz IC = 1A, VCE = 5V, f = 1kHz 20 1000 200 pF 1000 100 20000 2 3 2.8 4.5 V V V V IEBO VCE = 100V, IB = 0 VCE = 100V, VEB(off) = 1.5V VCE = 100V, VEB(off) = 1.5V, TC = +125°C VBE = 5V, IC = 0 100 1.0 300 3 5 V mA µA mA mA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
NTE263
.420 (10.67) Max
C B
.147 (3.75) Dia Max .110 (2.79)
E
.500 (12.7) Min
.250 (6.35) Max
NTE264 C B
Base .100 (2.54) Emitter Collector/Tab .500 (12.7) Max .070 (1.78) Max
E
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