|
Details, datasheet, quote on part number:NTE2634
| |
| Part: | NTE2634 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon Complementary Transistors High Frequency Video Driver |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE2634 datasheet File size : 22 kB |
| Request For quote: | Find where to buy NTE2634
|
| |
Datasheet text preview:
NTE2633 (NPN) & NTE2634 (PNP) Silicon Complementary Transistors High Frequency Video Driver
Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for highresolution color graphics monitors. Features: D High Breakdown Voltage D Low Output Capacitance Absolute Maximum Ratings: CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V CollectorEmitter Voltage (RBE = 100), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Total Power Dissipation (TS +115°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +175°C Thermal Resistance, JunctiontoSoldering Point (TS +115°C, Note 1), RthJS . . . . . . . . . 20K/W Note 1. TS is the temperature at the soldering point of the collector lead. Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage Symbol V(BR)CBO IC = 0.1mA V(BR)CEO IC = 10mA V(BR)CER IC = 10mA, RBE = 100 EmitterBase Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 0.1mA ICES ICBO DC Current Gain Transition Frequency CollectorBase Capacitance hFE fT Ccb IB = 0, VCE = 50V IE = 0, VCB = 50V IC = 50mA, VCE = 10V, TA = +25°C IC = 50mA, VCE = 10V, f = 100MHz, TA = +25°C IC = 0, VCB = 10V, f = 1MHz, TA = +25°C Test Conditions Min 115 95 110 3 20 0.8 Typ 35 1.2 2.0 Max Unit 100 20 GHz pF V V V V µA µA
.330 (8.38) Max
.175 (4.45) Max .450 (11.4) Max
.118 (3.0) Dia
.655 (16.6) Max
.030 (.762) Dia
E
C
B
.090 (2.28) .130 (3.3) Max
|
|
