Details, datasheet, quote on part number: NTE272
PartNTE272
CategoryDiscrete => Transistors => Bipolar => Darlington
DescriptionNTE272 (NPN) & NTE273 (PNP), Silicon Darlington Complementary Power Amplifiers
CompanyNTE Electronics, Inc.
DatasheetDownload NTE272 datasheet
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Features, Applications
NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers a TO202 type case designed for use in complementary amplifiers and driver applications. Features: D High DC Current Gain: hFE = 25,000 (Min) = 15,000 (Min) 500mA D Collector­Emitter Breakdown Voltage: V(BR)CES 500mA D Low Collector­Emitter Saturation Voltage: VCE(sat) 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector­Emitter Voltage (Note 2), VCEO. 40V Collector­Emitter Voltage, VCES. 40V Collector­Base Voltage, VCB. 50V Emitter­Base Voltage, VEB. 12V Collector Current, IC. 2A Total Power Dissipation (TA = +25°C), PD. 1W Derate above 25°C. 8mW/°C Total Power Dissipation (TC = +25°C), PD. 10W Derate above 25°C. 80mW/°C Operating Junction Temperature Range, TJ. to +150°C Storage Temperature Range, Tstg. to +150°C Thermal Resistance, Junction­to­Ambient, RthJA. 125°C/W Thermal Resistance, Junction­to­Case, RthJC. 12.5°C/W Note is a discontinued device and no longer available. Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output transistor.

Parameter OFF Characteristics Collector­Emitter Breakdown Voltage Collector­Base Breakdown Voltage Emitter­Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 3) DC Current Gain |hfe| = 200mA, VCE = 500mA, VCE = 1A, VCE = 5V Collector­Emitter Saturation Voltage Base­Emitter Saturation Voltage Base­Emitter ON Voltage Dynamic Characteristics Small­Signal Current Gain Collector­Base Capacitance hFE Ccb = 200mA, VCE = 100MHz, Note 2 VCB 1MHz pF VCE(sat) VBE(sat) VBE(ON) = 1A, VCE 5V V V(BR)CES = 100µA, VBE = 0 V(BR)CBO = 0 V(BR)EBO = 0 ICBO IEBO VCB = 0 VEB V nA Symbol Test Conditions Min Typ Max Unit

Note 3. Pulse test: Pulse Width 300µs, Duty Cycle 2.0%.

Uniwatt darlington transistors can be used in any number of low power applications, such as relay drivers, motor control and as general purpose amplifiers. As an audio amplifier these devices, when used as a complementary pair, can drive 3.5 watts into a 3.2ohm speaker using a 14 volt supply with less than one per cent distortion. Because of the high gain the base drive requirement is as low 1mA in this application. They are also useful as power drivers for high current application such as voltage regulators.


 

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