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Details, datasheet, quote on part number:NTE3082
 
 
Part:NTE3082
Description:NTE3082, Optoisolator NPN Darlington Transistor Output
Company:NTE Electronics, Inc.
Datasheet:Download NTE3082 datasheet   File size : 24 kB
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Datasheet text preview:
NTE3082 Optoisolator NPN Darlington Transistor Output
Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual­in­line packages. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Total Device Surge Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6000V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4242V Steady­State Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4500V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3200V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +85°C Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Infrared Emitting Diode (Emitter) Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1µs, PRR 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67mW/°C Darlington Connected Phototransistor (Detector) Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter­Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5mW/°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Infrared Emitting Diode Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance Phototransistor Collector­Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IF = 0 Emitter­Collector Breakdown Voltage V(BR)ECO IE = 100µA, IF = 0 Collector Dark Current Capacitance Coupled Characteristics DC Current Transfer Ratio Collector­Emitter Saturation Voltage Isolation Resistance Input to Output Capacitance Turn­On Time CTR VCE(sat) RIO Cio ton toff IF = 5mA, VCE = 1.5V IF = 5mA, IC = 2mA Input to Output Voltage = 500VDC, Note 1 Input to Output Voltage = 0, f = 1MHz, Note 1 VCE = 10V, IC = 10mA, RL = 100 VCE = 5V, IF = 10mA, RL = 1k Turn­Off Time VCE = 10V, IC = 10mA, RL = 100 VCE = 5V, IF = 10mA, RL = 1k 400 ­ 100 ­ ­ ­ ­ ­ ­ 0.8 ­ 0.5 105 10 60 700 ­ 1.0 ­ ­ ­ ­ ­ ­ % V G pF µs µs µs µs ICEO Cce VCE = 10V, IF = 0 VCE = 5V, f = 1MHz 30 7 ­ ­ ­ ­ 5 5 ­ ­ 100 ­ V V nA pF V(BR)R VF IR Ci IR = 10µA IF = 60mA VR = 3V V = 0, f = 1MHz 4 ­ ­ ­ ­ ­ ­ 30 ­ 1.7 1.0 ­ V V µA pF Symbol Test Conditions Min Typ Max Unit
Note 1. Measured with input diode leads shorted together, and output detector leads shorted together.
+ E D +
.375 (9.52) Max
.250 (6.35) Max .025 (.635)
Anode Cathode
1 2
4 Emitter 3 Collector
.350 (8.89) Max .025 (.635)
Seating Plane .300 (7.62) Min
.020 (.508) Square Typ
.300 (7.62)
.100 (2.54)