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Details, datasheet, quote on part number:NTE3083
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Datasheet text preview:
NTE3083 Optoisolator NPN Darlington Transistor Output
Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo darlington in a 6Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate D High Isolation: 3550VDC, 1012, 0.5pF Absolute Maximum Ratings: Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +100°C Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Linearly to 100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C Input to Output Isolation Voltage (1sec), VISOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3550VDC Input Diode Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Peak Forward Current (1µs pulse, 300pps), IFpeak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Output Darlington CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125mA ElectroOptical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Capacitance Resistance Voltage Breakdown Symbol Ciso Riso Viso Test Conditions f = 1MHz V = 500VDC t = 1sec Min 3550 Typ 0.5 Max Unit pF VDC Isolation Between Emitter and Detector 1011 1012
ElectroOptical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Emitter (GaAs LED) Forward Voltage Reverse Voltage Junction Capacitance Collector Breakdown Voltage Base Breakdown Voltage Emitter Breakdown Voltage Collector Leakage Current Saturation Voltage VF VR CJ IF = 20mA IR = 10µA VR = 0V 3.0 30 30 6 200 1.15 25.0 50 60 60 8 1 0.8 0.8 0.9 2 50k 6 80 200 400 400 1.50 100 1.0 1.0 1.2 pF µs µs µs % V V pF V V V nA V V V µA Symbol Test Conditions Min Typ Max Unit
Detector (Silicon PhotoDarlington) V(BR)CEO IC = 1mA V(BR)CBO IC = 10µA V(BR)EBO IE = 10µA ICEO VCE(sat) VCE = 10V IC = 2mA, IF = 1mA IC = 10mA, IF = 5mA IC = 50mA, IF = 10mA Base PhotoCurrent Darlington Gain CollectorEmitter Capacitance Switching Times, Coupled Rise Time, Fall Time TTL Gate TurnOn Time TTL Gate TurnOff Time DC Collector Current Transfer Ratio tr, tf tON tOFF CTR VCC = 10V, IC = 10mA, RL = 100 IF = 1mA IF = 1mA IF = 10mA, VCE = 5V IB hFE CCE VCB = 5V, IF = 10mA IB = 1µA, VCE = 1V VCE = 10V
6
5
4
1 Anode Cathode N.C. 1 2 3 6 Base 5 Collector 4 Emitter
2
3
.260 (6.6) Max
.070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .350 (8.89) Max .300 (7.62)
.085 (2.16) Max
.100 (2.54)
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