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Details, datasheet, quote on part number:NTE3085
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Datasheet text preview:
NTE3085 Optoisolator Photon Coupled Bilateral Analog FET
Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortionfree control of low AC and DC analog signals.
Features: As A Remote Variable Resistor D 100 to 300M D 99.9% Linearity D 15pF Shunt Capacitance D 100G I/O Isolation Resistance
As An Analog Signal Switch D Extremely Low Offset Voltage D 60VPP Signal Capability D No Charge Injection or Latchup D ton, toff 15µs
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Infrared Emitting Diode Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 100µs, 100pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak (Pulse Width 1µs, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Photo Detector Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C Breakdow Voltage, V(BR)46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Continouos Detector Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100mA Total Device Surge Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1770V SteadyState Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Infrared Emitting Diode Forward Voltage Reverse Current Capacitance PhotoDetector (Either Polarity) Breakdown Voltage OffState Dark Current OffState Resistance Capacitance Coupled Electrical Characteristics OnState Resistance Isolation Resistance (Input to Output) Input to Output Capacitance TurnOn Time TurnOff Time Resistance, NonLinearity and Asymmetry ton toff IF = 16mA, i46 = 25µARMS, f = 1kHz r46 VISO IF = 16mA, I46 = 100µA IF = 16mA, I64 = 100µA V10 = 500V V10 = 0, f = 1MHz IF = 16mA, RL = 50, V46 = 5V 100 200 200 2.5 15 15 0.1 G pF µs µs % V(BR)46 I46 = 10µA, IF = 0 I46 r46 C46 V46 = 15V, IF = 0 V46 = 15V, IF = 0, TA = +100°C V46 = 15V, IF = 0 V46 = 0, IF = 0, f = 1MHz 30 300 50 50 15 V nA µA M pF VF IR IF = 16mA VR = 6V V = 0, f = 1MHz 1.1 50 1.75 10 V µA pF Symbol Test Conditions Min Typ Max Unit
6
5
4 .260 (6.6) Max
Anode Cathode N.C.
1 2 3
6 Drain 5 N.C. 4 Source
1
2
3
.070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .300 (7.62)
.350 (8.89) Max
.085 (2.16) Max
.100 (2.54)
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