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Details, datasheet, quote on part number:NTE3086
 
 
Part:NTE3086
Description:NTE3086, Optoisolator Dual NPN Transistor Output
Company:NTE Electronics, Inc.
Datasheet:Download NTE3086 datasheet   File size : 24 kB
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Datasheet text preview:
NTE3086 Optoisolator Dual NPN Transistor Output
Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability. Features: D Two isolated Channels per Package D 7500V Withstand Test Voltage D CTR Minimum: 20% Absolute Maximum Ratings: Gallium Arsenide LED (Each Channel) Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/°C Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1µs, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Phototransistor (Each Channel) Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Collector­Emitter Breakdow Voltage, V(BR)CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector­Base Breakdow Voltage, V(BR)CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Collector Breakdow Voltage, V(BR)ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Total Device Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +150°C Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +250°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Gallium Arsenide LED Forward Voltage Reverse Voltage Reverse Current Junction Capacitance VF VR IR IF = 20mA IR = 10µA VR = 3V V = 0, f = 1MHz ­ 3 ­ ­ 1.1 25 ­ 80 1.5 ­ 10 ­ V V µA pF Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Phototransistor Detector Collector­Emitter Breakdown Voltage Emitter­Collector Breakdown Voltage Collector­Base Breakdown Voltage Collector­Emitter Leakage Current Collector­Emitter Capacitance Coupled Electrical Characteristics Collector­Emitter Saturation Voltage DC Current Transfer Ratio Isolation Voltage Isolation Resistance Input to Output Capacitance Bandwidth Switching Times Non­Saturated Rise Time, Fall Time Non­Saturated Rise Time, Fall Time Saturated Turn­On Time (From 5V to 0.8V) Saturated Turn­Off Time (From Saturation to 2V) tr, tf tr, tf ton(sat) toff(sat) VCC = 10V, IC = 2mA, RL = 100, Note 1 VCC = 10V, IC = 2mA, RL = 1k, Note 1 RL = 2k, IF = 40mA RL = 2k, IF = 40mA ­ ­ ­ ­ 2.4 15 5 25 ­ ­ ­ ­ µs µs µs µs BW VCE(sat) CTR V(BR)(I­O) R(I­O) IC = 2mA, IF = 16mA VCE = 10V, IF = 10mA t = 1sec VI­O = 500V f = 1MHz IC = 2mA, VCC = 10V, RL = 100 ­ 20 1011 ­ ­ 0.2 50 1012 0.4 150 0.4 ­ ­ ­ ­ ­ V % V pF kHz V(BR)CEO V(BR)ECO V(BR)CBO ICEO CCE IC = 100µA, IF = 0 IE = 100µA, IF = 0 IC = 10µA, IF = 0 VCE = 10V, IF = 0 VCE = 0, IF = 0 30 6 80 ­ ­ 85 13 ­ 5 8 ­ ­ ­ 100 ­ V V V nA pF Symbol Test Conditions Min Typ Max Unit
1500 2500
Note 1. The frequency at which IC is 3dB down from the 1kHz value.
Anode Cathode Cathode Anode
1 2 3 4
8 Emitter 7 Collector 6 Collector 5 Emitter
8
5
.250 (6.35)
1
4
.390 (9.9) Max
.185 (4.7) Max Seating Plane
.100 (2.54)
.115 (2.94) Min