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Details, datasheet, quote on part number:NTE3088
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Datasheet text preview:
NTE3088 Optoisolator Silicon NPN High Voltage Phototransistor Output
Description: The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in a 6Lead DIP type package designed for applications requiring high voltage output. This device is particularly useful in copy machines and solid state relays. Features: D High Voltage: 300V D High Isolation Voltage: VISO = 7500V (Peak) Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Input LED Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak Forward Current (Pulse Width = 1µs, 330pps), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A LED Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/°C Output Transistor CollectorEmitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V EmitterCollector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Detector Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/°C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . . 7500V Total Device Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/°C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering for 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. Isolation surge voltage is an internal device dielectric breakdown rating.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Input LED Reverse Leakage Current Forward Voltage Capacitance IR VF C VR = 6V IF = 10mA VR = 0, f = 1MHz VCE = 200V, RBE = 1M VCE = 200V, RBE = 1M, TA = +100°C CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage Coupled Current Transfer Ratio Isolation Surge Voltage Isolation Resistance CollectorEmitter Saturation Voltage Isolation Capacitance Switching TurnOn Time TurnOff Time ton toff VCC = 10V, IF = 5mA, RL = 100 5 5 µs µs CTR VISO RISO VCE(sat) CISO VCE = 10V, IF = 10mA, RBE = 1M 60Hz Peak AC, 1sec, Note 2 V = 500V, Note 2 IC = 0.5mA, IF = 10mA, RBE = 1M V = 0, f = 1MHz, Note 2 20 7500 1011 0.2 0.4 % V V(BR)CBO IC = 100µA V(BR)CER IC = 1mA, RBE = 1M V(BR)EBO IE = 100µA 1.2 18 10 1.5 µA V pF Symbol Test Conditions Min Typ Max Unit
Photodarlington (IF = 0 unless otherwise specified) CollectorEmitter Dark Current ICER 5 100 250 300 300 nA µA V V V
V pF
Note 2. For this test LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6 are common.
6 1 Pin Connection Diagram Anode Cathode N.C. 1 2 3 6 Base 5 Collector 4 Emitter .200 (5.08) Max .070 (1.78) Max
5 2
4 3
.260 (6.6) Max
.350 (8.89) Max
.300 (7.62)
.350 (8.89) Max
.085 (2.16) Max
.100 (2.54)
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